Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

Mizukami, Masaaki; Nishihara, K.; Ishida, Hideyuki; Aiso, Fumiki; Iguchi, Tadashi; Ichinose, D.; Fukumoto, A.; Aoki, Naofumi; Kondo, Masaki; Izumida, T.; Tanimoto, Hiroki; Enda, T.; Suzuki, Takaya; Mizushima, Ichiro; Arai, F.

doi:10.7567/ssdm.2009.g-4-1

Cited by 2 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9) On the other hand, fully-depleted SOI layer and BOX in SOI NAND flash memory cell can control SCE characteristics without increasing the channel doping concentration. 7,8) In addition, if there is no BOX leakage, the channel leakage can be greatly reduced because the junction area is very small. However, too thin BOX may cause BOX leakage induced by FN tunneling during channel boosting because of the high electrical field generated in the BOX.…”

Section: Tradeoffs In Nand Flash Memory Programmingmentioning

confidence: 99%

“…Also, operation margins may decrease in multi-level cell (MLC) technologies since large S-factor worsens on/off current ratio. 7,8) In order to suppress SCE without scaling EOT, channel doping must be increased. However, suppressing SCE by high channel doping concentration leads to junction leakage and lower channel boost ratio during program-inhibit in bulk NAND flash memories.…”

Section: Introductionmentioning

confidence: 99%

“…9) The details of this problem are discussed in the next section. Therefore, as the device scaling proceeds towards the limits of the International Technology Roadmap for Semiconductor (ITRS), 10) new device structures such as silicon-on-insulator (SOI) transistors 5,8) and fin-type field effect transistor (FinFET) 7) are being investigated in order to exploit the ultimate potential of the NAND flash memory. Although there are many factors that may determine the scaling limitation of a NAND flash memory, in this paper, the tradeoffs between SCE, channel boosting leakage and channel boosting ratio characteristics are focused by means of three-dimensional (3D) device simulation from 20 to below 10 nm generations.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

Miyaji

Hung

Takeuchi

2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The scaling trends and limitation in sub-20 nm a bulk and silicon-on-insulator (SOI) NAND flash memory is studied by the three-dimensional (3D) device simulation focusing on short channel effects (SCE), channel boost leakage and channel voltage boosting characteristics during the program-inhibit operation. Although increasing punch-through stopper doping concentration is effective for suppressing SCE in bulk NAND cells, the generation of junction leakage becomes serious. On the other hand, SCE can be suppressed by thinning the buried oxide (BOX) in SOI NAND cells. However, the boosted channel voltage decreases by the higher BOX capacitance. It is concluded that the scaling limitation is dominated by the junction leakage and channel boosting capability for bulk and SOI NAND flash cells, respectively, and the scaling limit is decreased to 9 nm using SOI NAND flash memory cells from 13 nm in bulk NAND flash memory cells.

show abstract

Section: Tradeoffs In Nand Flash Memory Programmingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

Miyaji

Hung

Takeuchi

2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The measured S-factors are much smaller than the conventional flash memory whose value is 200-400 mV/decade due to the double poly gate structure. 21) The steep S-factor enables a fast read as well as a lower voltage operation such as 0.5 V read. It is also effective to make read operation immune to the WL (gate) or virtual ground BL (source) noise.…”

Section: Measured Reliabilitymentioning

confidence: 99%

Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-Side Assisted Erase Scheme Using Minimum Channel Length/Width Standard Complemental Metal–Oxide–Semiconductor Single Transistor Cell

Miyaji

Shinozuka

Takeuchi

2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The thermal response of a semi-infinite medium in air, irradiated by laser light in a cylindrical geometry, cannot accurately be approximated by single radial and axial time constants for heat conduction. This report presents an analytical analysis of heat conduction where the thermal response is expressed in terms of distributions over radial and axial time constants. The source term for heat production is written as the product of a Gaussian shaped radial term and an exponentially shaped axial term. The two terms are expanded in integrals over eigenfunctions of the radial and axial parts of the Laplace heat conduction operator. The result is a double integral over the coupled distributions of the two time constants to compute the temperature rise as a function of time and of axial and radial positions. The distribution of axial time constants is a homogeneous slowly decreasing function of spatial frequency (ν) indicating that one single axial time constant cannot reasonably characterize axial heat conduction. The distribution of radial time constants is a function centred around a distinguished maximum in the spatial frequency (λ) close to the single radial time constant value used previously. This suggests that one radial time constant to characterize radial heat conduction may be a useful concept. Special cases have been evaluated analytically, such as short and long irradiation times, axial or radial heat conduction (shallow or deep penetrating laser beams) and, especially, thermal relaxation (cooling) of the tissue. For shallow penetrating laser beams the asymptotic cooling rate is confirmed to be proportional to [(t) 0.5 − (t − t L ) 0.5 ] which approaches 1/t 0.5 for t t L , where t is the time and t L is the laser pulse duration. For deep penetrating beams this is proportional to 1/(t − t L ). For intermediate penetration, i.e. penetration depths about equal to spot size diameters, this is proportional to 1/(t − t L ) 1.5 . The double integral has been evaluated numerically and the results have been compared with the various approximations available including the new results and the single time constant model. The present analysis completes our previous work, presents a closed-form formulation for the non-ablative thermal response of laser irradiated tissue and provides insight into the practical value of using time constants for representing heat conduction effects, in particular for the rate of cooling of the tissue surface. § Present address:

show abstract

Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

Cited by 2 publications

References 0 publications

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-Side Assisted Erase Scheme Using Minimum Channel Length/Width Standard Complemental Metal–Oxide–Semiconductor Single Transistor Cell

Contact Info

Product

Resources

About