Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs

Voronina, T. I.; Lagunova, T. S.; Mikhaĭlova, M. P.; Moiseev, K. D.; Rosov, A. E.; Yakovlev, Yu. P.

doi:10.1134/1.1187343

Cited by 4 publications

(6 citation statements)

References 5 publications

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“…This fact confirms a leading contribution of the electrons in the total conductivity. Figure 8 shows an abrupt variation of the Hall mobility as µ H ∼ d 2 as the electron channel width (d) decreases with increasing acceptor doping level [70]. It is interesting to note that similar behaviour of electron mobility was observed recently in semimetal GaInSb/InAs superlattices and is explained by the interface roughness scattering mechanism of carriers.…”

Section: Depletion Of the Electron Channel At The P-gainassb/p-inas H...supporting

confidence: 77%

“…Here we consider the peculiarities of magnetotransport in the type II broken-gap single GaInAsSb/InAs heterostructure. The first striking result was the observation of the electron-type conductivity in the p-GaInAsSb/p-InAs heterojunction under study with an undoped and slightly doped quaternary layer grown by LPE on a p-InAs substrate [59][60][61][62] although p-type conductivity was expected to exist [40]. An electron channel with high Hall mobility (50 000-70 000 cm 2 (V s) −1 at 4.2-77 K) was found in isotype p-Ga 0.83 In 0.17 As 0.22 Sb 0.78 /p-InAs heterostructures.…”

Section: Electron Channel In Low Magnetic Fieldsmentioning

confidence: 99%

“…The parameters of self-consistent quantum wells on the heterointerface and concentration of 2D-carriers will be considered in section 5. Evidence of the 2D-nature of the electron channel at the GaInAsSb/InAs interface was obtained from quantum magnetotransport experiments [69][70][71].…”

Section: Electron Channel In Low Magnetic Fieldsmentioning

confidence: 99%

“…Interface-induced phenomena in magnetotransport properties of the semimetal channel were experimentally studied of the type II broken-gap GaInAsSb/InAs single heterojunction grown by LPE with high quality interface in a wide range of high magnetic fields at low temperatures [70,[78][79][80][81]. The samples under study with quaternary solid solutions undoped and doped with Te or Zn were prepared by standard Hall geometry with six ohmic contacts.…”

Section: Quantum Magnetotransport and Quantum Hall Effect At A Type I...mentioning

confidence: 99%

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Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Mikhaĭlova¹,

Moiseev²,

Yakovlev³

2004

Semicond. Sci. Technol.

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This review deals with a study of optical and magnetotransport phenomena at a type II arsenide-antimonide heterojunction with a broken-gap alignment. A fundamental feature of this structure is partial overlapping of the InAs conduction band with the GaSb-rich solid solution valence band. In such a heterostructure, electrons and holes are spatially separated and localized in self-consistent quantum wells formed on both sides of the heterointerface. This leads to unusual tunnelling-assisted radiative recombination transitions and novel transport properties. Results of a pioneering study of interface-related luminescence in type II broken-gap GaInAsSb/InAs heterostructures, with a high quality abrupt heteroboundary, grown by the LPE method, are presented. The energy band diagram of the type II broken-gap GaInAsSb/InAs(GaSb) heterostructures and band overlapping control, depending on a doping level and epilayer composition of quaternary solid solution, are discussed. A 2D-electron channel with high Hall mobility at the p-GaInAsSb/p-InAs interface was found and examined. A great deal of attention is paid to quantum transport properties of the semimetal channel in a wide magnetic field range (up to 18 T) at low temperatures. A cyclotron resonance study was used to obtain data on the energy spectrum at the interface and to estimate effective masses for subbands in the semimetal channel. The intriguing behaviour of the 2D-electron system in the presence of localized holes in high magnetic fields and the first observation of integer quantum Hall effect plateaus on the type II single GaInAsSb/InAs heterointerface formed by LPE are demonstrated. A tunnelling-injection laser with high asymmetric band offset confinements based on the type II broken-gap heterojunction is considered. Applications of the interface-induced phenomena in luminescent and transport properties for the design of novel mid-IR optoelectronic devices and Hall sensors are briefly reviewed.

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Section: Depletion Of the Electron Channel At The P-gainassb/p-inas H...supporting

confidence: 77%

Section: Electron Channel In Low Magnetic Fieldsmentioning

confidence: 99%

Section: Electron Channel In Low Magnetic Fieldsmentioning

confidence: 99%

Section: Quantum Magnetotransport and Quantum Hall Effect At A Type I...mentioning

confidence: 99%

See 2 more Smart Citations

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Mikhaĭlova¹,

Moiseev²,

Yakovlev³

2004

Semicond. Sci. Technol.

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“…7,8 The EL spectra at 77 K contained two pronounced low-energy emission bands at 0.316 and 0.372 eV under reverse bias with negative polarity applied to a narrow-gap p-type semiconductor. 9 For such a structure, a quantum-size potential well for electrons was formed at the type II broken-gap interface due to carrier injection to the heteroboundary by external electric field. Due to heavy doping of GaInAsSb quaternary solid solution with Zn ͑p Ͼ 5 ϫ 10 17 cm −3 ͒, no electron conductivity in the heterostructure was observed from magnetotransport measurements, and, moreover, the depletion of the electron channel at the p-GaInAsSb/ p-InAs heterointerface was confirmed.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Oswald

Pangrác

Hulicius

et al. 2005

Journal of Applied Physics

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Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures J. Appl. Phys. 97, 063704 (2005); 10.1063/1.1857058 Interface photoluminescence in type II broken-gap P-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs single heterostructures Low temperature photoluminescence of Ga 0.84 In 0.16 As 0.22 Sb 0.78 solid solutions lattice matched to InAsGa 0.84 In 0.16 As 0.22 Sb 0.78 quaternary solid solutions, lattice matched to InAs, were grown by liquid phase epitaxy on ͑100͒-oriented p-InAs substrates from In-rich melt. The p-type Ga 0.84 In 0.16 As 0.22 Sb 0.78 layers were intentionally undoped or slightly doped with Sn to the hole concentration about p ϳ 5 ϫ 10 16 cm −3 . This allowed us to obtain a high-mobilityϳ͑3.5− 5.0͒ ϫ 10 4 cm 2 V −1 s −1 electron channel at the type II broken-gap p-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs heterointerface. Low-temperature ͑T =5 K͒ electroluminescence spectra exhibited two pronounced emission bands h 1 = 0.372 eV and h 2 = 0.400 eV under forward bias. The emission band h 2 was split into two lines and was attributed to interband transitions through acceptor and valence-band states in the bulk InAs, whereas emission band h 1 was ascribed to interface-related radiative transitions of electrons from the two-dimensional electron channel to the interface states at the p-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs heteroboundary.

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Structural and optical characterization of type II In0.14Ga0.86As0.13Sb0.87/GaSb heterostructure doped with zinc grown by liquid phase epitaxy

Dı́az-Reyes

Mendoza-Álvarez

Rodríguez-Fragoso

et al. 2013

Vibrational Spectroscopy

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Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs

Cited by 4 publications

References 5 publications

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Structural and optical characterization of type II In0.14Ga0.86As0.13Sb0.87/GaSb heterostructure doped with zinc grown by liquid phase epitaxy

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