Depletion effect of polycrystalline-silicon gate electrode by phosphorus deactivation

Jeon, Woojin; Ahn, Ji‐Hoon

doi:10.1016/j.sse.2016.10.042

Cited by 2 publications

(2 citation statements)

References 17 publications

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“…For the ZrO 2 ALD, several mechanisms have been suggested to explain the degradation of the interface between the insulator and metal (bottom electrode), including the oxidation of the metal substrate by an oxygen source in the initial stage of ALD [34,35] and the oxygen scavenging effect of the metal substrate. [36] Both mechanisms are affected by the deposition process temperature; a higher process temperature facilitates the degradation of the interface. To clarify the origin that induced the capacitance density decreasing in the MIS capacitors using ZrO 2 deposited at 300 °C, the hysteresis and frequency dispersion characteristics of the MIS capacitors were investigated.…”

Section: Resultsmentioning

confidence: 99%

Optimizing the Crystallinity of a ZrO₂ Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Nam,

Lee,

Jeong

et al. 2024

Adv Materials Inter

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The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2 is favorable to achieving higher capacitance density in metal–insulator–metal capacitors with ZrO2 thin films, it decreases the capacitance with increasing applied bias in Mo/ZrO2/InGaZnO (IGZO)‐structured MIS capacitors. Through comprehensive physical, chemical, and electrical characterizations, this study investigated the mechanism underlying the decreasing capacitance with increasing the applied bias in the accumulation state of the Mo/ZrO2/IGZO‐structured MIS capacitor depending on the crystallinity of ZrO2. Furthermore, the investigation identifies the optimal crystal structure of ZrO2 thin films for IGZO‐based MIS capacitors, highlighting the importance of forming meso‐crystalline structures in high dielectric constant (k) materials to enhance the k value and mitigating the decrease in capacitance caused by the accumulated carrier loss through grain boundaries of ZrO2.

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Section: Resultsmentioning

confidence: 99%

Optimizing the Crystallinity of a ZrO₂ Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Nam,

Lee,

Jeong

et al. 2024

Adv Materials Inter

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“…Additionally, the aligned lattice array with several high-orderly crystallites in the localized zone of the poly-Si (n + ) layer is demonstrated in Figure S5, which implied that the poly-Si (n + ) layer was of high quality and tend to enhance the conductivity. Jeon and Ahn reported that the major reason for the polysilicon depletion effect in the polycrystalline-silicon gate electrode was not the out-diffusion of phosphorus but the electrical deactivation of phosphorus, 24 which was segregated at the GB. Therefore, by increasing the size of the polycrystalline silicon grain, it was capable to reduce the polysilicon depletion effect and enhance the tolerance to deactivation.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Exploration of Phosphorus Oxide in Heavily Phosphorus-Doped Polysilicon Films of Tunneling Oxide Passivation Contact Solar Cells

Wang

Lan

et al. 2022

ACS Appl. Electron. Mater.

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The investigation aims to reveal and confirm the phosphorus (P)–oxygen (O) bonds formed in the poly-Si (n+) film of the TOPCon device, which is beneficial for reducing the resistivity and the potential barriers of grain boundaries (GBs) due to further passivation of GBs within the film. To overcome the difficulty of gaining the chemical components in the interface and bulk of the n-Si/SiO x /poly-Si (n+) materials, we undertake X-ray photoelectron spectroscopy (XPS) with the depth profile by means of argon ion milling, in which the collision damage of ion with target surface has been neglected because of an effective detectable depth and longer mean escape depth of the optoelectron in the ionized state in the sampling point of the subsurface. High-resolution transmission electron microscopy (HR-TEM) has been employed to check the atomic lattice morphology of the multi-layer stacks for further distinguishing the crystallographic plane orientation of crystallites and ultrathin SiO x layer feature distribution in the interfacial region and bulk of SiO x /poly-Si (n+) films. The results of XPS-P 2p fitting peaks at 133.4 and 136.2 eV and −O 1s satellite peak at 535.3 eV, respectively, manifesting that the P–O bonds or derivatives (PO x ) may be present in the poly-Si (n+) film and localized in the GBs, through the heavily P dopants that induce tensile stress within crystallites and compress stress in GBs. The conclusion has been supported by the variation of thermodynamic functions, such as molar enthalpy, reaction entropy, Gibbs energy, and formation energy of silicon and phosphorus oxides, at the temperatures of 298 and 1173 K in terms of the minimum principle of energy.

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Depletion effect of polycrystalline-silicon gate electrode by phosphorus deactivation

Cited by 2 publications

References 17 publications

Optimizing the Crystallinity of a ZrO₂ Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Optimizing the Crystallinity of a ZrO₂ Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Exploration of Phosphorus Oxide in Heavily Phosphorus-Doped Polysilicon Films of Tunneling Oxide Passivation Contact Solar Cells

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Depletion effect of polycrystalline-silicon gate electrode by phosphorus deactivation

Cited by 2 publications

References 17 publications

Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Exploration of Phosphorus Oxide in Heavily Phosphorus-Doped Polysilicon Films of Tunneling Oxide Passivation Contact Solar Cells

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Optimizing the Crystallinity of a ZrO₂ Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Optimizing the Crystallinity of a ZrO₂ Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors