Dependency analysis of line edge roughness in electron-beam lithography

Zhao, Xunwang; Lee, S.-Y.; Choi, Jin; Lee, S.-H.; Shin, In-Kyun; Jeon, Chan-Uk; Kim, B.-G.; Cho, H.-K.

doi:10.1016/j.mee.2014.11.017

Cited by 7 publications

(2 citation statements)

References 20 publications

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“…In a previous study, 14 it is observed that the LER is high inside a feature, rapidly decreases over the feature edge, and then mostly stays low or slightly increases outside the feature. This is mainly due to the fact that the exposure level quickly drops down from the exposed area (inside the feature) to the unexposed area (outside the feature) and the absolute stochastic fluctuation of exposure is smaller outside the feature, i.e., in the unexposed area.…”

Section: Minimization Of Ler and CD Errormentioning

confidence: 79%

Practical approach to modeling e-beam lithographic process from SEM images for minimization of line edge roughness and critical dimension error

Guo

Lee

Choi

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Minimization of line edge roughness and critical dimension error in electron-beam lithography J. Vac. Sci. Technol. B 32, 06F505 (2014); 10.1116/1.4899238 Temperature dependent effective process blur and its impact on exposure latitude and lithographic targets using e-beam simulation and proximity effect correction J. Vac. Sci. Technol. B 32, 06F503 (2014); 10.1116/1.4896600 Derivation of line edge roughness based on analytic model of stochastic exposure distributionTwo main factors which limit the minimum feature size and the maximum circuit density achievable by electron-beam (e-beam) lithography are the line edge roughness (LER) and the proximity effect. Since the LER is caused by the stochastic nature of the exposing and development processes, it does not scale with the feature size. Therefore, reducing the LER is essential as the feature size continues to decrease. Accurate modeling of the LER and the proximity effect analytically or via simulation for their minimization is either difficult or costly in many cases. In this study, a practical method for extracting the essential information from SEM images, needed to characterize the e-beam lithographic process, and an effective method for minimizing the LER and critical dimension error based on the extracted information have been developed. The main objective is that the methods utilize only the information extracted from SEM images without having to know the complete setup of e-beam lithographic process. It has been shown that they have a good potential to be further developed into practical and useful tools.

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Section: Minimization Of Ler and CD Errormentioning

confidence: 79%

Practical approach to modeling e-beam lithographic process from SEM images for minimization of line edge roughness and critical dimension error

Guo

Lee

Choi

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…To accelerate the development and application of 3D materials whose functionality depends on the geometric shape, methodologies that can grow and assemble atomically architected 3D structures with optimal manufacturability are required. Recently, the lithographic methods have been widely used for fabricating 3D structures; however, they are problematic in terms of the atomic perfection of 3D structured samples. , In a lithographic process, dry etching techniques are employed to minimize and shape 3D structures, which unavoidably introduce some damage to and/or deformation of the atomic structures. Because the size of a sample is geometrically constrained to a nanometer length scale, at least in one of the three dimensions, disordered atomic arrangements significantly degrade the physical properties or induce deviation from an ideal value.…”

Section: Introductionmentioning

confidence: 99%

Atomically Architected Silicon Pyramid Single-Crystalline Structure Supporting Epitaxial Material Growth and Characteristic Magnetism

Irmikimov

Pamasi

Hattori

et al. 2021

Crystal Growth & Design

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The control of three-dimensional (3D) geometrical shapes is one of important approaches that contribute the development of new functionalities in material science. We produced 3D Si pyramids with atomically flat and reconstructed {111} facet surfaces supporting atomically resolved material growth in 3D space for the first time. The complex 4-fold clean 7×7 and 2×2-Fe low-energy electron diffraction (LEED) patterns reflecting the pyramidal geometry showed the realization of atomically reconstructed facet surfaces on the 3D patterned Si. Cross-sectional transmission electron microscopy (TEM) revealed the epitaxial heterointerfaces between Fe nanofilm and Si facet surfaces. The LEED and TEM results indicate the applicability of the Si pyramid as a supporting substrate for arbitrarily oriented 3D functional structures. The pyramidal Fe nanofilm displayed magnetic properties depending on the geometric shape, owing to the facet surfaces and the sharp facet edges. The unique anisotropic magnetization behavior of the 3D pyramid shape indicates that the epitaxial growth of an arbitrary geometry by virtue of the atomically ordered substrate surfaces in 3D space can contribute to the modification of the functionality.

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