Dependence of the sticking coefficient of sputtered atoms on the target–substrate distance

Mahieu, Stijn; Aeken, K. Van; Depla, Diederik; Smeets, Dries; Vantomme, André

doi:10.1088/0022-3727/41/15/152005

Cited by 25 publications

(19 citation statements)

References 22 publications

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“…Based on the sticking coefficients for N and Ti atoms, information can be obtained on the stoichiometry of the deposited TiN x film. Assuming a sticking coefficient of 1 for N atoms,16 and of 0.5 for Ti atoms,18 the fluxes presented in Figure 6b would give rise to a stoichiometry x much larger than one. However, in ref.…”

Section: Particle‐in‐cell–monte Carlo Collisions (Pic‐mcc) Simulationsmentioning

confidence: 99%

Computer Modeling of Plasmas and Plasma‐Surface Interactions

Bogaerts

Bultinck

Eckert

et al. 2009

Plasma Processes & Polymers

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In this paper, an overview is given of different modeling approaches used for describing gas discharge plasmas, as well as plasma‐surface interactions. A fluid model is illustrated for describing the detailed plasma chemistry in capacitively coupled rf discharges. The strengths and limitations of Monte Carlo simulations and of a particle‐in‐cell–Monte Carlo collisions model are explained for a magnetron discharge, whereas the capabilities of a hybrid Monte Carlo–fluid approach are illustrated for a direct current glow discharge used for spectrochemical analysis of materials. Finally, some examples of molecular dynamics simulations, for the purpose of plasma‐deposition, are given.

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Section: Particle‐in‐cell–monte Carlo Collisions (Pic‐mcc) Simulationsmentioning

confidence: 99%

Computer Modeling of Plasmas and Plasma‐Surface Interactions

Bogaerts

Bultinck

Eckert

et al. 2009

Plasma Processes & Polymers

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“…A useful qualitative indication of whether variations in sticking coefficient affect the film composition is that such variations result 28 in a temperature-dependent, but not pressure-dependent, film composition. (This "rule of thumb", however, is not necessarily always valid [128], and should be used with some skepticism.) For MAX phases, evaporative loss of the A element during thin-film growth has been observed in several MAX-phase systems.…”

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confidence: 99%

The M+1AX phases: Materials science and thin-film processing

et al. 2010

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This article is a critical review of the M n+1 AX n phases ("MAX phases", where n =1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides ("X") of a transition metal ("M") and an A-group element. The most well known are Ti 2 AlC, Ti 3 SiC 2 , and Ti 4 AlN 3 . There are ~60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M n+1 X n slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods.Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental materials properties. However, the surface-initiated decomposition of M n+1 AX n thin films into MX compounds at temperatures of 1000-1100 °C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically require synthesis temperatures of ~800 °C, recent results have demonstrated that V 2 GeC and Cr 2 AlC can be deposited at ~450 °C. Also, thermal spray of Ti 2 AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principles calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials 3 analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti 4 SiC 3 , Ta 4 AlC 3 , and Ti 3 SnC 2 . Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as superconductivity, magnetism, and optics. 4

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“…The input values for the Ar pressure, the external voltage, RC, SC Ti , and SC N are 1.0 Pa (60 sccm), −600 V, 0.1, 0.5,19 and 1,4 respectively. The cathode current was kept constant at 0.2 A, by keeping the external resistance at 1500 Ω.…”

Section: Resultsmentioning

confidence: 99%

“…When a Ti or N atom collides with a wall, it can be reflected or adsorbed, depending on its sticking coefficient (SC). The SC of a reactive N atom is mostly assumed to be 1,4 whereas the SC of Ti is found to be dependent on target‐substrate distance 19. In accordance to these reported values,19 a SC Ti of 0.5 is chosen in our model.…”

Section: Description Of the Modelmentioning

confidence: 99%

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Particle‐in‐Cell/Monte Carlo Collisions Model for the Reactive Sputter Deposition of Nitride Layers

Bultinck

Mahieu

Depla

et al. 2009

Plasma Processes & Polymers

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A 2d3v Particle‐in‐cell/Monte Carlo collisions (PIC/MCC) model was constructed for an Ar/N2 reactive gas mixture in a magnetron discharge. A titanium target was used, in order to study the sputter deposition of a TiNx thin film. Cathode currents and voltages were calculated self‐consistently and compared with experiments. Also, ion fluxes to the cathode were calculated, which cause sputtering of the target. The sputtered atom fluxes from the target, and to the substrate were calculated, in order to visualize the deposition of the TiNx film.

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Dependence of the sticking coefficient of sputtered atoms on the target–substrate distance

Cited by 25 publications

References 22 publications

Computer Modeling of Plasmas and Plasma‐Surface Interactions

Computer Modeling of Plasmas and Plasma‐Surface Interactions

The M+1AX phases: Materials science and thin-film processing

Particle‐in‐Cell/Monte Carlo Collisions Model for the Reactive Sputter Deposition of Nitride Layers

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