A combined Monte Carlo (MC)/analytical surface model is developed to study the plasma processes occurring during the reactive sputter deposition of TiO x thin films. This model describes the important plasma species with a MC approach (i.e. electrons, Ar + ions, O + 2 ions, fast Ar atoms and sputtered Ti atoms). The deposition of the TiO x film is treated by an analytical surface model.The implementation of our so-called multi-species MC model is presented, and some typical calculation results are shown, such as densities, fluxes, energies and collision rates. The advantages and disadvantages of the multi-species MC model are illustrated by a comparison with a particle-in-cell/Monte Carlo collisions (PIC/MCC) model. Disadvantages include the fact that certain input values and assumptions are needed. However, when these are accounted for, the results are in good agreement with the PIC/MCC simulations, and the calculation time has drastically decreased, which enables us to simulate large and complicated reactor geometries.To illustrate this, the effect of larger target-substrate distances on the film properties is investigated. It is shown that a stoichiometric film is deposited at all investigated target-substrate distances (24, 40, 60 and 80 mm). Moreover, a larger target-substrate distance promotes film uniformity, but the deposition rate is much lower.