Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2

Rate-temperature relation for MBE growth of GaAs layers

“…The rate-temperature relationship for GaAs and related 111-V materials has been investigated in the past by a number of workers (Shaw 1968, Lavrent-eva et al 1983, Aleksandrova et al 1984. These studies contributed to the understanding of the basic nature of epitaxial processes.…”