Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Mkawi, E.M.; Ibrahim, Kamarulzaman; Ali, Majid Khan Majahar; Farrukh, Muhammad Akhyar; Mohamed, A. S.

doi:10.1007/s10854-013-1657-5

Cited by 24 publications

(19 citation statements)

References 24 publications

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“…The obtained values of Hall measurement are similar to the values reported for the device quality CZTS thin films [21]. Therefore, this material can be considered for singlejunction solar cells.…”

Section: Electrical Studysupporting

confidence: 86%

Nanostructured Cu2ZnSnS4 thin films: influence of substrate temperature on structural, morphological, optical and electrical properties

Adelifard

2015

Appl. Phys. A

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Photovoltaic Cu 2 ZnSnS 4 (CZTS) thin films have been deposited on the glass substrate by a simple and low-cost spray pyrolysis technique without sulfurization treatment in a toxic atmosphere. The influence of the substrate temperatures on the structural, compositional, morphological, optical and electrical properties of the CZTS films was investigated. The formation of kesterite structure in the films was confirmed using X-ray diffraction measurements. The improved crystallinity of the CZTS with a (112) orientation was observed with increasing the substrate temperature. The band gap of all films was found to be in the range from 1.44 to 1.56 eV which is close to the ideal band gap for the highest theoretical conversion efficiency of solar cell. AFM analysis revealed a smooth, compact and crack-free morphology. The electrical studies showed that all these samples had a p-type conductivity, and the free hole density and mobility increased with increasing the substrate temperature.

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Section: Electrical Studysupporting

confidence: 86%

Nanostructured Cu2ZnSnS4 thin films: influence of substrate temperature on structural, morphological, optical and electrical properties

Adelifard

2015

Appl. Phys. A

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“…After the reactions, the NWD electrode remained intact without obvious material detachment (Figure 7a), whereas considerable amounts of CZTS were detached in the NOD electrode (Figure 7b). We observed a new peak occurred at 254 cm −1 , which could be resulted from compositional fluctuations and disordered kesterite phase formation [54] of CZTS caused by aggressive HER. We determined no considerable change in the Raman spectra of the NWD electrode Adv.…”

Section: Resultsmentioning

confidence: 80%

Geogrid‐Inspired Nanostructure to Reinforce a Cu_xZn_ySn_zS Nanowall Electrode for High‐Stability Electrochemical Energy Conversion Devices

Chiu

Chen

Lee

et al. 2017

Advanced Energy Materials

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Inspired by geogrids commonly applied in construction engineering to reinforce side slopes and retaining walls, the use of a “nano‐geogrid” to reinforce a CuxZnySnzS (CZTS) nanowall electrode for application in electrochemical reactions is demonstrated. The CZTS nanowall electrode reinforced by the nano‐geogrid (denoted as NWD) shows not only remarkable mechanical and electrochemical stability but also considerable electrochemical performances. The NWD demonstrated as a counter electrode in a dye‐sensitized solar cell shows a power conversion efficiency of 7.44 ± 0.04%, comparable with the device using Pt as electrode, and also significantly improves device stability as compared with that afforded by an electrode comprising a CZTS nanowall without the nano‐geogrid (denoted as NOD). In addition, applying the NWD electrode as a cathode in photo‐electrochemical hydrogen evolution reactions (HERs) yields a photocurrent density of −10 mA cm−2 at −0.162 V (vs RHE) under AM 1.5 illumination. Moreover, when HERs are conducted under extreme conditions, the NWD electrode remains intact, whereas the NOD electrode is completely peeled off after 10 min of reaction. Therefore, the concept of using a mimetic rational nanostructure could pave the way for the possibility of improving the performance and stability of various devices.

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“…ZnS thin films were then sulfurized at 350°C, 400°C, 450°C, and 500°C for 3 h in the presence of sulfur powder (30 mg). Solar cells were fabricated by chemical bath deposition of a ZnS buffer layer (70 nm thick) on an as-deposited Cu 2 ZnSnS 4 (CZTS) thin-film absorber layer (fabricated on Mo-coated soda-lime glass as described in our previous work 15 ), followed by deposition of 60-nm-thick i-ZnO and 500-nm-thick aluminum-doped zinc oxide layers using radiofrequency (RF) sputtering. The cells were completed by thermal evaporation of Al contacts, resulting in a cell structure of soda-lime glass/Mo/CZTS/ZnS/ZnO/ Al grid.…”

Section: Methodsmentioning

confidence: 99%

Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

Mkawi

Ibrahim

Ali

et al. 2015

Journal of Elec Materi

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Zinc sulfide (ZnS) thin films were prepared on indium tin oxide-coated glass by electrodeposition using aqueous zinc sulfate, thiourea, and ammonia solutions at 80°C. The effects of sulfurization at temperatures of 350°C, 400°C, 450°C, and 500°C on the morphological, structural, optical, and electrical properties of the ZnS thin films were investigated. X-ray diffraction analysis showed that the ZnS thin films exhibited cubic zincblende structure with preferred (111) orientation. The film crystallization improved with increasing annealing temperature. Field-emission scanning electron microscopy images showed that the film morphology became more compact and uniform with increasing annealing temperature. The percentage of sulfur in the ZnS thin films increased after sulfurization until a stoichiometric S/Zn ratio was achieved at 500°C. The annealed films showed good adhesion to the glass substrates, with moderate transmittance (85%) in the visible region. Based on absorption measurements, the direct bandgap increased from 3.71 eV to 3.79 eV with annealing temperature, which is attributed to the change of the buffer material composition and suitable crystal surface properties for effective p-n junction formation. The ZnS thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu 2 ZnSnS 4 /ZnS/ZnO/Al grid. The best solar cell efficiency was 1.86%.

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Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Cited by 24 publications

References 24 publications

Nanostructured Cu2ZnSnS4 thin films: influence of substrate temperature on structural, morphological, optical and electrical properties

Nanostructured Cu2ZnSnS4 thin films: influence of substrate temperature on structural, morphological, optical and electrical properties

Geogrid‐Inspired Nanostructure to Reinforce a Cu_xZn_ySn_zS Nanowall Electrode for High‐Stability Electrochemical Energy Conversion Devices

Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

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Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Cited by 24 publications

References 24 publications

Nanostructured Cu2ZnSnS4 thin films: influence of substrate temperature on structural, morphological, optical and electrical properties

Nanostructured Cu2ZnSnS4 thin films: influence of substrate temperature on structural, morphological, optical and electrical properties

Geogrid‐Inspired Nanostructure to Reinforce a CuxZnySnzS Nanowall Electrode for High‐Stability Electrochemical Energy Conversion Devices

Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

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Geogrid‐Inspired Nanostructure to Reinforce a Cu_xZn_ySn_zS Nanowall Electrode for High‐Stability Electrochemical Energy Conversion Devices