Dependence of the Exchange Bias on the Thickness of Antiferromagnetic Layer in the Trilayered NiFe/IrMn/NiFe Thin-films

Gritsenko, Christina; Dzhun, I. O.; Чеченин, Н.Г.; Babaytsev, Georgy V.; Rodionova, Valeria

doi:10.1016/j.phpro.2015.12.176

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…Another important issue is the study of an AFM layer thickness influence on the exchange bias effect. For each particular structure, this influence will be unique, but the general tendency is an increase in the effect value with increasing AFM layer thickness from a few to tens of nanometers [ 13 , 14 , 15 ]. In this work, the Fe 50 Mn 50 alloy was chosen as an antiferromagnetic material, which is commonly used in the mentioned industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Complex Study of Magnetization Reversal Mechanisms of FeNi/FeMn Bilayers Depending on Growth Conditions

et al. 2022

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Magnetization reversal processes in the NiFe/FeMn exchange biased structures with various antiferromagnetic layer thicknesses (0–50 nm) and glass substrate temperatures (17–600 °C) during deposition were investigated in detail. Magnetic measurements were performed in the temperature range from 80 K up to 300 K. Hysteresis loop asymmetry was found at temperatures lower than 150 K for the samples with an antiferromagnetic layer thickness of more than 10 nm. The average grain size of FeMn was found to increase with the AFM layer increase, and to decrease with the substrate temperature increase. Hysteresis loop asymmetry was explained in terms of the exchange spring model in the antiferromagnetic layer.

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Section: Introductionmentioning

confidence: 99%

Complex Study of Magnetization Reversal Mechanisms of FeNi/FeMn Bilayers Depending on Growth Conditions

et al. 2022

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Regulation of Microstructure, Static, and Microwave Magnetic Performance of NiFe/FeMn/NiFe Heterogeneous Multilayer Films Based on Thickness of FeMn Films

Liu

Lan

Zhong

et al. 2020

J Supercond Nov Magn

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Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

Shang

Yang

Zhan

et al. 2016

Journal of Applied Physics

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We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir 20 Mn 80 /Y 3 Fe 5 O 12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the IrMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.

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Dependence of the Exchange Bias on the Thickness of Antiferromagnetic Layer in the Trilayered NiFe/IrMn/NiFe Thin-films

Cited by 3 publications

References 17 publications

Complex Study of Magnetization Reversal Mechanisms of FeNi/FeMn Bilayers Depending on Growth Conditions

Complex Study of Magnetization Reversal Mechanisms of FeNi/FeMn Bilayers Depending on Growth Conditions

Regulation of Microstructure, Static, and Microwave Magnetic Performance of NiFe/FeMn/NiFe Heterogeneous Multilayer Films Based on Thickness of FeMn Films

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

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