Regulation of Microstructure, Static, and Microwave Magnetic Performance of NiFe/FeMn/NiFe Heterogeneous Multilayer Films Based on Thickness of FeMn Films

Liu, Yu; Lan, Zhongwen; Zhong, Yu; Guo, Rongdi; Jiang, Xiaona; Wu, Chuanjian; Sun, Kening

doi:10.1007/s10948-020-05712-x

Cited by 6 publications

(3 citation statements)

References 36 publications

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“…a spin diffusion length of ∼2 nm and a positive spin Hall angle of 0.008 [16,17]. Special interest has been devoted to NiFe/FeMn bilayers and NiFe/FeMn/NiFe trilayer system for their compatibility of the read operation with the state-of-the-art electronic platform [18][19][20][21][22]. In our earlier studies, we demonstrated the zero-field resonance mode in NiFe/FeMn bilayers and explored the importance of a biasfield-free system for microwave devices [23,24].…”

Section: Introductionmentioning

confidence: 99%

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Panigrahi,

Raja,

Murapaka

et al. 2024

J. Phys. D: Appl. Phys.

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Microwave devices with more than one operating frequency and their ease of tunability are of great importance for high-frequency information processing. Magnetic thin films offer an unparalleled advantage of engineering different microwave bands that can be precisely tailored and reconfigured externally. Here, novel trilayer structures consisting of NiFe/FeMn/NiFe with varying anti-ferromagnetic FeMn layer thickness have been investigated by exploring their ferromagnetic resonance (FMR) properties and inverse spin Hall effect (ISHE) responses. Two-step magnetic hysteresis loops are observed for higher FeMn thickness (t ≥ 12 nm), where the bottom NiFe layer shows a comparatively more significant shift due to the presence of strong interfacial exchange coupling. FMR study reveales two resonant modes associated with the two ferromagnetic layers, which are distinguishable for higher thicknesses of FeMn or at high excitation frequencies. The choice of FeMn thickness determines the operating frequencies, which can be finely tailored by optimizing the FeMn thickness. Gilbert damping parameter is found to be in the range of 0.009 - 0.012 where the presence of exchange bias adds to the the scattering mechanisms. Prominent ISHE responses are obtained from the bottom NiFe layer as compared to the top NiFe layer. Variation of FeMn thickness also shows a strong influence on the spin pumping (Vsp), and perpendicular anisotropic magnetoresistance (VAMR⊥) components. The results are correlated with the efficiency of spin flow and spin-to-charge conversion of the FeMn layer. Our systems can be used as an emerging alternative for microwave detectors and microwave energy harvesters.

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Section: Introductionmentioning

confidence: 99%

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Panigrahi,

Raja,

Murapaka

et al. 2024

J. Phys. D: Appl. Phys.

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“…It is commonly described in terms of the additional TMS on random fields that occurs due to local variation of the AF exchange bias field [29,30]. To separate the effects of this large number of factors from each other, the angle, temperature, and F [25] and AF [22,31] layers' thicknesses dependences of magnetization dynamics were studied.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Magnetization Dynamics in Co/IrMn and Co/FeMn Exchange Biased Structures

Dzhun,

Gerasimenko,

Ezhov

et al. 2023

Magnetochemistry

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Thin film ferromagnet/antiferromagnet (F/AF) exchange biased structures that are widely used in GMR spin valves are considered nowadays as promising systems for antiferromagnetic spintronic and spin-orbitronic devices. Here, the temperature dependences of magnetization dynamics in Co/IrMn and Co/FeMn F/AF structures are investigated using ferromagnetic resonance (FMR) in comparison to a free Co layer. A strong additional decrease in the resonance field was observed in Co/IrMn with a temperature decrease attributed to the rotatable anisotropy increase, which almost vanished at room temperature. In contrast to Co/IrMn, the contribution of the rotatable anisotropy in Co/FeMn is much weaker, even though it exists at RT, it is negative, and slightly varies with the temperature and resonance field shift in Co/FeMn. This is mainly due to unidirectional exchange anisotropy. FMR linewidth for the free Co layer increases with decreasing temperature and is accompanied with a slow relaxation process, while the additional contribution to FMR line broadening in Co/IrMn and Co/FeMn structures is correlated with variation in the exchange anisotropy. The observed results are discussed based on structural and surface morphology and magnetization reversal characterization using X-ray diffraction, atomic force microscopy, and vibrating sample magnetometry data.

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“…as a critical component of magnetic random-access memory [2,3], microwave devices [4], and magnetic sensors [5]. The effect manifests as a displacement of the hysteresis loop along the field axis [6].…”

Section: Introductionmentioning

confidence: 99%

Critical curves in NiFe/FeMn bilayers with varying antiferromagnetic layer thickness

Adams¹,

Cimpoesu²,

Benit³

et al. 2021

J. Phys. D: Appl. Phys.

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The effect of antiferromagnetic (AF) layer thickness on exchange bias was studied in a series of NiFe(50 nm)/FeMn(t) bilayers through both irreversible and reversible experiments at room temperature. The exchange bias was evaluated in the sample plane both through measurement of the major hysteresis loops and probing the reversible susceptibility. The critical curve was constructed to map the angular dependence of the magnetization switching and exchange bias, which is found to evolve as a function of AF layer thickness. Ferromagnetic resonance absorption was measured at several frequencies and angles, and angular-dependent absorption curves were plotted. A comparison is made between the recorded exchange bias using the three methods. The measurements reported are supported by simulations under a generalized Stoner–Wohlfarth model, and general limitations of the experiment are discussed.

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Regulation of Microstructure, Static, and Microwave Magnetic Performance of NiFe/FeMn/NiFe Heterogeneous Multilayer Films Based on Thickness of FeMn Films

Cited by 6 publications

References 36 publications

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Temperature Dependence of Magnetization Dynamics in Co/IrMn and Co/FeMn Exchange Biased Structures

Critical curves in NiFe/FeMn bilayers with varying antiferromagnetic layer thickness

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