Dependence of the electrical and optical properties on the bias voltage for ZnO:Al films deposited by r.f. magnetron sputtering

Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

“…Magnetron sputtering is the preferred technique because of its potential for room-temperature processing [5]. Many researchers have therefore tried to produce high quality AZO thin films deposited at room temperature by magnetron sputtering [6][7][8][9]. Lee and Song [8] have reported the deposition of AZO films at room temperature by RF sputtering with a bias voltage.…”

“…Many researchers have therefore tried to produce high quality AZO thin films deposited at room temperature by magnetron sputtering [6][7][8][9]. Lee and Song [8] have reported the deposition of AZO films at room temperature by RF sputtering with a bias voltage. Chen et al [9] have successfully fabricated AZO thin films at room temperature with oxygen control.…”

The effect of substrate bias voltage on PbTe films deposited by magnetron sputtering

“…This is due to the high bias voltage make the clusters of the sputtered material more energy, which results in bombardment with surface more sharply. And the bombardment makes the number of molecules peeled off from the film [13]. Fig.…”

Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

“…This is originated from their low cost and wide availability of their constituent raw materials, their comparable high optical transmittance, non-toxicity, high stability against H 2 plasma, and low electrical resistivity with respect to indium tin oxides (ITOs) [1][2][3][4][5][6][7].…”