Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

“…In addition, the decreasing oxygen vacancy in AZO fabricated using a higher pressure condition increased the sheet resistance of AZO, as shown in Table 2. The XPS and sheet resistance results are consistent with those in previous AZO reports [24,25].Conversely, the XPS result of the O1s core level for ZnO showed that Oi was dominant, as shown in Fig. 4c.…”

“…AZO fabricated with a higher working pressure tends to have improved crystallinity, as shown in Table 1. The XRD result is consistent with those of previous AZO studies [24,25]. In addition, AZO stoichiometry has been reported to be strongly correlated with the concentration of oxygen vacancy and can be controlled using the sputtering working pressure condition [24].…”

“…Figure 4d shows that the area of Oii was substantially larger than Oi, indicating that a large amount of oxygen vacancies existed in the AZO film. An increase of the Oi area at a higher working pressure is attributable to an increase of the Zn-O bond and a reduction of oxygen vacancies [24]. This tendency was demonstrated in the area ratio of Oii/Oi, which decreased with increasing working pressure, as shown in Fig.…”

Tunable deep-level emission in ZnO nanoparticles via yttrium doping

“…So we fit the spectra with Gaussian function and the deconvolutions show the presence of two different O1s peaks in the Zn 0.95 Y 0.05 O nanoparticles. The peak centered at 531.0 eV is associated to the O 2− ion in the wurtzite structure surrounded by the Zn atoms with their full complement of nearest-neighbour O 2− ions [36][37][38][39][40][41][42][43][44], whereas the peak centered at 532.7 eV can be ascribed to the specific chemisorbed oxygen, such as -CO 3 , adsorbed O 2 , or adsorbed H 2 O [36][37][38][39][40][41][42][43][44]. Fig.…”

Fabrication of AZO TCO Films by RF-sputtering and Their Physical Properties

“…The electrical resistivity slowly increases with the increase of working pressure and the electron concentration vice versa. Those change of electrical properties has direct relationship with the change of unintentionally generated native defects in the AZO films: the increase of the plasma power induces the increase of the native defects due to higher deposition rate, which compensate free electrons, and the increase of the working pressure induces the increase of the native defects due to shorter mean-free path, which can compensate free electrons [13,14]. Also, all AZO films have the serious dependence of the annealing temperature: an electrical resistivity of 87 Ωcm and an electron concentration of 1.3 x 10 17 cm -3 is changed to an electrical resistivity of 3.7 x 10 -2 Ωcm and an electron concentration of 1.2 x 10 20 cm -3 in terms of thermal annealing.…”