2009
DOI: 10.1016/j.jcrysgro.2009.04.041
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Dependence of RF power on the phase transformation for boron nitride films deposited on graphite at room temperature

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Cited by 9 publications
(10 citation statements)
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“…We have previously reported that MS is an attractive technique for the synthesis of cBN and oBN-phase-rich films on graphite [18]. It was demonstrated that rf power plays an important role in the phase transformation between oBN and cBN.…”
Section: Resultsmentioning
confidence: 99%
“…We have previously reported that MS is an attractive technique for the synthesis of cBN and oBN-phase-rich films on graphite [18]. It was demonstrated that rf power plays an important role in the phase transformation between oBN and cBN.…”
Section: Resultsmentioning
confidence: 99%
“…The RF power was 250 W. The deposition time for all samples was 70 min. The pressure, applied RF power, and gas composition are the most important parameters in the RF sputtering process [3,6].…”
Section: Methodsmentioning
confidence: 99%
“…A BN thin film with nano-metric thickness has high transparency [1][2][3][4][5][6][7][8]. A UV-Vis spectrophotometer was used for the transmittance and absorbance measurements.…”
Section: Figure 3 Afm Images Of the Deposited Layersmentioning
confidence: 99%
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“…Boron nitride material is a dry lubricant with excellent properties, which can be altered with respect to the crystal morphology. BN layers were applied in electron-field emitters, high-temperature dielectrics, tribological devices, and optoelectronic systems [19][20][21]. BN material can be also used in solar cell industry as it can be implemented at high temperature [22][23][24][25].…”
Section: Boron Nitride (Bn) Thin Filmsmentioning
confidence: 99%