Dependence of Reliability of Ferroelectric HfZrO&lt;inf&gt;x&lt;/inf&gt; on Epitaxial SiGe Film with Various Ge Content

Chen, Kuen-Yi; Huang, Yen‐Hua; Kao, Ruei-Wen; Lin, Yan-Xiao; Wu, Yongfu

doi:10.1109/vlsit.2018.8510643

Cited by 4 publications

(3 citation statements)

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“…A p-type epi-GeSn with 5% Sn/epi-Ge/Si substrate was used as the starting material for the fabrication of FeCAPs where the epi-GeSn and epi-Ge were formed by solid-phase epitaxy and rapid thermal chemical vapor deposition, respectively. Then, HZO of 12 nm was deposited on the epi-GeSn film by the plasma-enhanced ALD process tool. , Next, FeCAPs were complete by depositing and patterning with 100 × 100 μm 2 TiN metal followed by RTA (500 °C/30 s) to induce ferroelectricity (denoted as STD-FeCAPs). To improve the interface quality between HZO and epi-GeSn, an interface engineering by depositing a high- k AlON IL of 1.2 nm was performed by the ALD process prior to HZO deposition on some samples (denoted as AlON-FeCAPs), where AlON allows more voltage drop on HZO and enhances reliability .…”

Section: Methodsmentioning

confidence: 99%

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Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Peng

Huang

Chou

et al. 2021

ACS Appl. Mater. Interfaces

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Epitaxial GeSn (epi-GeSn) shows the capability to form ferroelectric capacitors (FeCAPs) with a higher remanent polarization (P r) than epi-Ge. With the interface engineering by a high-k AlON, the reliability of the epi-GeSn-based FeCAPs is enhanced. Using the highly reliable FeCAP in series with a resistor as the synapse and axon, a simplified neuromorphic network based on a differentiator circuit is proposed. The network not only holds the leaky integrate-and-fire (LIF) function but is also capable of recognizing the spatiotemporal features, which sets it apart from other LIF neurons arising from the FeCAP-modulated leaky behavior of the potential on the axon by spiking-time-dependent plasticity. Furthermore, it is more energy efficient to operate, nondestructive to read, and simpler to fabricate by employing FeCAPs, making it eligible for emergent spiking neural network hardware accelerators.

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Section: Methodsmentioning

confidence: 99%

“…Then, HZO of 12 nm was deposited on the epi-GeSn film by the plasma-enhanced ALD process tool. 35,36 Next, FeCAPs were complete by depositing and patterning with 100 × 100 μm 2 TiN metal followed by RTA (500 °C/30 s) to…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Peng

Huang

Chou

et al. 2021

ACS Appl. Mater. Interfaces

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“…[6][7][8][13][14][15]. Therefore, the benchmarking comparison within different works can be misleading due to the inconsistent pulsing schemes.…”

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Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors

Ronchi

Wang

et al. 2022

IEEE J. Electron Devices Soc.

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In this work, the impacts of various pulsing schemes on endurance are comprehensively investigated. Trapezoidal and triangular waveforms are considered in endurance cycling tests. For endurance cycling with the trapezoidal waveforms, different rising time (Tr) / falling time (Tf), e.g., 0.05-5 µs, with a fixed pulse width (Twidth) and different pulse width (Twidth), i.e., 0-10 µs, with fixed rising time (Tr) / falling time (Tf) are used. As for the endurance cycling with the triangular waveforms, the frequencies are ranged from 1 kHz to 1 MHz. The results indicate that a shorter rising time (Tr) / falling time (Tf) results in a completely different endurance characteristic, and a longer Twidth leads to an earlier breakdown. Furthermore, the higher frequency of the triangular waveform results in a larger remnant polarization (2Pr) after endurance cycling. Overall, the endurance is highly dependent on the pulsing schemes, suggesting that a standardized methodology for the endurance evaluation is necessary for fair benchmarks and qualification of the ferroelectric-based technologies.

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Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

2023

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Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and lowpower operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, and variability. There is a broad consensus that a deep understanding of the reliability physics of HfO2-FeFETs is an essential prerequisite for the successful commercialization of this promising technology. In this paper, we review the current understanding of the relevant reliability aspects of HfO2-FeFETs. We initially focus on the reliability physics of ferroelectric capacitors, as a prelude to a comprehensive analysis of FeFET reliability. Then, we interpret key reliability metrics of the FeFET at device-level (i.e., retention, endurance, variability) based on the physical mechanisms previously identified. Our integrative theoretical framework connects apparently unrelated reliability issues and suggests mitigation strategies at either device, circuit, and system level. We conclude the paper by proposing a set of research opportunities to guide future development in this field.

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Dependence of Reliability of Ferroelectric HfZrO<inf>x</inf> on Epitaxial SiGe Film with Various Ge Content

Cited by 4 publications

References 2 publications

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

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Dependence of Reliability of Ferroelectric HfZrO<inf>x</inf> on Epitaxial SiGe Film with Various Ge Content

Cited by 4 publications

References 2 publications

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

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Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges