1987
DOI: 10.1109/proc.1987.13810
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Dependence of process parameters on planarization isolation and etching of sloped vias in polyimides for GaAs ICs

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Cited by 4 publications
(2 citation statements)
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“…Control of sidewall profile angle is possible by varying gas concentrations, plasma power, and ambient pressure [240][241][242][243]. High aspect ratios have been reported for patterning polyimides with an electron-cyclotron resonance source and O 2 plasma [244].…”
Section: Removal Strategiesmentioning
confidence: 99%
“…Control of sidewall profile angle is possible by varying gas concentrations, plasma power, and ambient pressure [240][241][242][243]. High aspect ratios have been reported for patterning polyimides with an electron-cyclotron resonance source and O 2 plasma [244].…”
Section: Removal Strategiesmentioning
confidence: 99%
“…In addition to the conventional processes such as near micron lithography and lift off, ohmic and Schottky contacts etc most of the state-of-the-art unit processes such as air bridge technology, rapid thermal processing, polymide passivation, via hole technology and Boron isolation have been standardised at CEERI [82][83][84].…”
Section: Inp Based Receh·ermentioning
confidence: 99%