Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Bineva, I.; Nesheva, D.; Šćepanović, M.; Popović, Zoran S.; Levi, Z.

doi:10.1016/j.jlumin.2006.04.011

Cited by 3 publications

(6 citation statements)

References 40 publications

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“…4. This is in good agreement with our previous results on furnace annealed SiO x films [13] and gives us a basis to attribute this band to radiative recombination in Si-nanoparticles grown during the RTA process.…”

Section: Resultssupporting

confidence: 92%

“…3 a, b. PL spectra of SiO x films annealed for 15 s exhibit two broad bands in the visible energy range: the green one at about 2.4 eV ascribed to radiative recombination via defect states in the SiO x matrix [13,14] and the red-orange one at 2.2 eV. The dependence of the green PL band energy on the initial oxygen content for 15s RTA samples, designated as "3", is shown in Fig.…”

Section: Resultsmentioning

confidence: 97%

“…A segregation of a-Si nanoparticles in the SiO x matrix certainly starts at annealing temperature of 1100°C. Since the annealing time is too short, most probably the density of nanoparticles is not high enough [13] so one can expect a rather low intensity of the surface band. Hence, this band can be attributed to interstitial oxygen in the Si substrate [2], or to the oxygen vacancies in the SiO x matrix produced after annealing in vacuum.…”

Section: Resultsmentioning

confidence: 99%

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Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO<sub>x</sub> Thin Films

Milutinović¹,

Dohčević‐Mitrović²,

Nesheva

et al. 2007

MSF

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Silicon suboxide, SiOx thin films with different oxygen contents (1.15≤x≤1.70) were prepared by thermal evaporation of silicon monoxide at a residual oxygen pressure of 1·10-3 Pa and deposition rates of 0.2, 1.0, 3.0 and 6.0 nm/s. Rapid thermal annealing (RTA) of films was carried out at 1100°C in vacuum for 15 and 30 s and the films were analyzed by infrared (FTIR) and photoluminescence (PL) spectroscopy. In the FTIR spectra of SiOx annealed samples, a blue-shift of the stretching band with initial oxygen content, x, is observed. This band is shifted to a much lower frequency with prolonged RTA time. This behavior can be interpreted in terms of the partial decrease of oxygen content and film density upon annealing in vacuum. With annealing time increase a new band at 1106 cm-1 appears. Therefore, infrared spectra of SiOx films are significantly affected by the oxygen content. PL spectra of these films also change drastically with increasing annealing time. In the PL spectra of films annealed for 15 s two bands are easily visible: broad redorange band at 2.2 eV and a green band at 2.4 eV, while for 30 s annealing only low-energy band exists. Green band is connected with the defects in the SiOx matrix while red-orange band can be deconvoluted into several bands at 2.0, 2.3 and 2.5 eV. Two types of defects can be responsible for the PL band at about 2 eV: defects in a-Si (amorphous silicon) nanoparticles separated during RTA, and nonbridging oxygen hole recombination centers (NBOHC) formed by loosing of oxygen during RTA. The PL band at 2.3 eV is associated with the defects formed at a-Si/SiOx interfaces while a hardly visible band at 2.5 eV is related to the defects connected with the oxygen deficiency formed in the SiOx matrix during RTA.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

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Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO<sub>x</sub> Thin Films

Milutinović¹,

Dohčević‐Mitrović²,

Nesheva

et al. 2007

MSF

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“…Photoluminescence investigations were carried out under excitation with both the 442 nm line of an (He–Cd) + laser and the 488 nm line of an Ar + laser 19, 20, but in this article mostly spectra measured under excitation with the 488 nm line will be shown and discussed. The results obtained with the 442 nm line are in good agreement with the data obtained under excitation with the 488 nm one.…”

Section: Resultsmentioning

confidence: 99%

“…Similar results have been obtained on samples with x = 1.4 and 1.5. It has been ascertained that the lower the initial oxygen content, the shorter is the annealing time at which the maximum PL intensity is achieved 20.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence from SiO_x layers containing amorphous silicon nanoparticles

Nesheva

2012

Physica Status Solidi (a)

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The article summarizes the main results of a systematic study on the preparation of amorphous SiOx thin films with various contents (1.1≤ x ≤1.7) by thermal evaporation of SiO in vacuum, growth of amorphous Si nanoparticles by furnace annealing at 973 K for various times (5–200 min) and investigation of photoluminescence (PL) from the annealed films. Infrared (IR) transmission measurements prove the annealing‐induced phase separation. Raman scattering data indicate the formation of pure amorphous Si phase. Intense room‐temperature PL is detected from films with x ≥ 1.5, visible with a naked eye. Two PL bands are resolved, peaked at around 2.3 eV and in the range 1.6–2.2 eV. The former does not shift appreciably with varying annealing time and initial film composition. It is related to radiative recombination via defect states at the a‐Si/SiOx interface. The maximum of the low‐energy band shows a gradual red shift with decreasing x and increasing annealing time, i.e., with increasing nanoparticle size. This is related to carrier recombination in amorphous Si nanoparticles. Investigations of thermal quenching of the PL confirm the last assumption. Room‐temperature PL spectra of SiOx films with four different compositions annealed in an Ar atmosphere at 973 K for 60 min. The dash‐dot spectrum was measured on a film with x = 1.15 annealed for 30 min at 523 K.

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Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

et al. 2020

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Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Cited by 3 publications

References 40 publications

Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO<sub>x</sub> Thin Films

Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO<sub>x</sub> Thin Films

Photoluminescence from SiO_x layers containing amorphous silicon nanoparticles

Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

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Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Cited by 3 publications

References 40 publications

Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO<sub>x</sub> Thin Films

Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO<sub>x</sub> Thin Films

Photoluminescence from SiOx layers containing amorphous silicon nanoparticles

Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

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Photoluminescence from SiO_x layers containing amorphous silicon nanoparticles