Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

“…Secondly, Schottky emission also occurs because of thermal activation. When the positive bias is applied to the top Ag electrode, thermally activated electrons receive a sufficient amount of energy to jump from the valence band to the conduction band [30][31][32]. Therefore, it can be concluded that different material devices with diverse geometry and parameters can provide an outcome of conducting filament occurrence conditional to the ion migration rate and redox reaction.…”

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

“…Furthermore, it is interesting to note that diverse switching behaviors can be observed in CBRAMs by engineering the stacking sequences of oxide thin films in a bilayer switching medium. The CBRAM devices fabricated with bilayers of SnO 2 and IGZO with different stacking showed contrasting switching behaviors in both oxide stacks [ 45 ]. The CBRAM device with the switching layer of SnO 2 /IGZO presented bipolar switching characteristics ( Figure 4 g,h), whereas its reverse stack IGZO/SnO 2 showed unipolar switching ( Figure 4 i,j).…”

“…The possibility of controlling CF morphologies during the device operation provides opportunities to CBRAMs for versatile applications. Moreover, the shape of the CF also determines the possibility of the existence of unipolar or bipolar switching [ 45 ].…”

Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers

“…Currently, emerging brain-inspired neuromorphic systems have demonstrated their great potential to execute various intellectual issues such as decision making and machine learning like the human brain, which has been attached to extensive attention especially in the field of artificial intelligence (AI). − The future target of higher level brain-inspired neuromorphic systems is to completely emulate behaviors of the biological human brain with energy-effective methods, including curiosity, perception, natural language processing, autonomous learning, and decision making, which hold the promise with high-performance electronic devices to meet the increasing demand for various applications. , Therefore, some electronic devices like transistor and non-volatile memory (NVM) to perform artificial synaptic behaviors (such as long-term potentiation (LTP), long-term depression (LTD), and paired-pulse facilitation (PPF)) are under investigation by more and more researchers. − As the typical representative of NVM, resistive random access memory (RRAM) has attracted increasing attention due to its synapse-like structure, nanosecond-level operation speed, low power consumption, and outstanding scalability. − The resistive switching (RS) performance determined the quality of an RRAM device, which is always influenced by applied materials of the RS layer. Stable RS performance can be observed on RRAM devices with RS layers fabricated from metal oxides (MO) such as aluminum oxide (AlO x ), nickel oxide (NiO), hafnium oxide (HfO x ), and gallium oxide (GaO x ). − In addition, excellent RS performance are also investigated in biological materials (silk protein and albumen), polymer materials (polydiacetylene and polyvinyl alcohol), and two-dimensional materials (graphene oxide and molybdenum disulfide). ,− Apart from materials used in RRAM devices, the fabrication methods also play vital roles in the study of the device performance.…”

“…Stable RS performance can be observed on RRAM devices with RS layers fabricated from metal oxides (MO) such as aluminum oxide (AlO x ), nickel oxide (NiO), hafnium oxide (HfO x ), and gallium oxide (GaO x ). − In addition, excellent RS performance are also investigated in biological materials (silk protein and albumen), polymer materials (polydiacetylene and polyvinyl alcohol), and two-dimensional materials (graphene oxide and molybdenum disulfide). ,− Apart from materials used in RRAM devices, the fabrication methods also play vital roles in the study of the device performance. Traditional methods like atomic layer deposition (ALD) and sputtering can deposit thin-film RS layers with stable performance, while emerging methods such as the solution-processed (SP) methods with spin-coating or drop-casting processes can further improve the performance of RRAM devices with higher fabrication efficiency. ,,, Compared with conventional fabrication methods of RS thin films, emerging methods represented by the SP methods have demonstrated their positive characteristics, such as low fabrication cost with the elimination of vacuum deposition processes, easy acquisition of precursor materials, and high-efficiency throughput of devices. − For now, more and more evidence has supported that the electronic devices, including the two-terminal and three-terminal devices, fabricated by SP techniques, revealed great potential in the field of artificial synapse. , Apart from the advantages mentioned above, the application of SP methods is effective to protect functional materials and flexible devices from the destruction caused by high temperatures during the fabrication and measurement process, which indicates the benefits for investigations of the high-performance brain-computer interfaces and wearable electronics. , Among several main SP techniques, drop-casting, dip-coating, and spin-coating have been commonly used to fabricate uniform thin films in the research of memristors. , The printing techniques like inkjet printing, screen printing, and aerosol jet printing have been accepted in the process of patterned recognition due to their superiority such as lower materials consumption, higher cost-effective fabrication process, and eco-friendly prospect. , …”