Dependence of Hooge parameter of InAs heterostructure on temperature

Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

“…2 for which the value of ␣ is 7.32ϫ 10 −3 , while at T = 290 K, ␣ = 8.4ϫ 10 −3 . 16 This suggests a lower bound of ϳ5 ϫ 10 −4 for the Hooge's parameter in both one-dimensional and two-dimensional InAs systems. 4.…”

“…© 2008 American Institute of Physics. 16,17 In particular, heavily doped InAs heterostructure with constant carrier concentration shows 1 / f noise at various temperatures with Hooge's parameter ␣ decreasing from 10 −3 at room temperature to 5 ϫ 10 −4 at 50 K. 16 In other systems, Lorentzian noise either overlaps or totally dominates the 1 / f noise due to generation-recombination ͑gr͒ mechanism, reduction of the carrier number, and shrinking of the trap energy range accessible to channel carriers. 1 This noise originates from conductivity fluctuations due to trapping/detrapping processes at the surface and various scattering mechanisms in the sample, which cause fluctuations in the number of charge carriers and sample mobility.…”

“…͓DOI: 10.1063/1.3031701͔ Low-frequency 1 / f noise is commonly accepted as a very sensitive measure of the quality and reliability of electronic devices. [18][19][20][21] For example, noise in zinc oxide ͑ZnO͒ NW FETs follows 1 / f behavior at room temperature but changes completely to Lorentzian at 4.2 K. 18 Although there exist a number of reports on noise characteristics of NWs and nanotube, [5][6][7][8][9][10][11][12][13][14][15][16][17][18] there is no systematic study on the noise behavior of InAs NWs, which is a system with attractive potential for high performance transistor and logic device applications due to its high electron mobility. [2][3][4] The defect/trap states at surface or interface are believed to be responsible for the 1 / f noise in semiconductor nanowire ͑NW͒ devices as well.…”

Low-frequency noise in AlSb∕InAs high-electron-mobility transistor structure as a function of temperature and illumination

“…[2][3][4] In this letter, measurements of the lowfrequency noise characteristics of AlSb/ InAs HEMT structures from 60 to 300 K, with and without illumination, are reported. The structures used in this study consist of a variety of patterns which included gated HEMTs, ungated HEMTs, and transmission line model (TLM) patterns.…”

GenerationRecombination

“…However, when bias or temperature are varied, the semiconductor properties are no longer constant. The value of the total noise increases with the applied voltage related through ohm's law [4]. When the temperature is lowered, the situation is not clearer [5,6].…”