“…At V т = 1.3·10 -14 cm 3 , ρ = 2.7 g/cm -3 , τ р1 = 10 -8 s, τ g = 10 -11 s, and Е = 200 keV, we have W 0 = 10 13 Gy/s. This power is close to the threshold of brittle fracture of crystals [14]. For τ g = 10 -11 -10 -8 s, W 0 = 10 13 -10 10 Gy/s.…”
Section: An Optimal Absorbed Dosesupporting
confidence: 51%
“…Figure 1 shows a qualitative curve of defect relaxation in the track according to Eq. (14). It is particularly remarkable that the sharp maximum of the curve transforms into a plateau at τ g << τ р1 .…”
Section: Radiation Defect Accumulation Energy In a Charged-particle Tmentioning
confidence: 93%
“…To describe the radiation power and kinetic effects, D. I. Vaisburd et al [13,14] developed a track approach taking the proton beam irradiation of ionic crystals as an example. We extended this method to the case of electron irradiation of materials.…”
Section: Statement Of the Problemmentioning
confidence: 99%
“…The other terms in Eq. (14) describe different stages of the Frenkel-pair destruction. If the pair components are within the instability zone, the losses of the complementary defects in the monomolecular process are described by an exponential dependence exp…”
Section: Radiation Defect Accumulation Energy In a Charged-particle Tmentioning
665.65The mechanisms of the radiation defect formation in alkali halide crystals are studied in an extremely wide range of the absorbed radiation dose rate (10 1 -10 12 Gy/s). It is found that the power dependence of color centers accumulation is described by a curve with a maximum at a dose rate of about 10 10 Gy/s. The electron and proton track parameters for ionic crystals are calculated in the context of the theory of ionization losses of chargedparticle energy. Proceeding from the concept of the charged-particle track overlap, the theoretical relations are obtained that explain the radiation power effect in all dielectric materials including alkali halide crystals. The suppression of color center accumulation in these crystals under high-power electron irradiation is due to a more regular topography of the radiation defect formation.
“…At V т = 1.3·10 -14 cm 3 , ρ = 2.7 g/cm -3 , τ р1 = 10 -8 s, τ g = 10 -11 s, and Е = 200 keV, we have W 0 = 10 13 Gy/s. This power is close to the threshold of brittle fracture of crystals [14]. For τ g = 10 -11 -10 -8 s, W 0 = 10 13 -10 10 Gy/s.…”
Section: An Optimal Absorbed Dosesupporting
confidence: 51%
“…Figure 1 shows a qualitative curve of defect relaxation in the track according to Eq. (14). It is particularly remarkable that the sharp maximum of the curve transforms into a plateau at τ g << τ р1 .…”
Section: Radiation Defect Accumulation Energy In a Charged-particle Tmentioning
confidence: 93%
“…To describe the radiation power and kinetic effects, D. I. Vaisburd et al [13,14] developed a track approach taking the proton beam irradiation of ionic crystals as an example. We extended this method to the case of electron irradiation of materials.…”
Section: Statement Of the Problemmentioning
confidence: 99%
“…The other terms in Eq. (14) describe different stages of the Frenkel-pair destruction. If the pair components are within the instability zone, the losses of the complementary defects in the monomolecular process are described by an exponential dependence exp…”
Section: Radiation Defect Accumulation Energy In a Charged-particle Tmentioning
665.65The mechanisms of the radiation defect formation in alkali halide crystals are studied in an extremely wide range of the absorbed radiation dose rate (10 1 -10 12 Gy/s). It is found that the power dependence of color centers accumulation is described by a curve with a maximum at a dose rate of about 10 10 Gy/s. The electron and proton track parameters for ionic crystals are calculated in the context of the theory of ionization losses of chargedparticle energy. Proceeding from the concept of the charged-particle track overlap, the theoretical relations are obtained that explain the radiation power effect in all dielectric materials including alkali halide crystals. The suppression of color center accumulation in these crystals under high-power electron irradiation is due to a more regular topography of the radiation defect formation.
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