Dependence of crystallographic orientation for rhombohedral PZT thin films on their electrical properties

Thickness-driven antiferroelectric-to-ferroelectric phase transition of thin PbZrO3 layers in epitaxial PbZrO3∕Pb(Zr0.8Ti0.2)O3 multilayers

“…Structure and properties of single-phase antiferroelectric ͑AFE͒ orthorhombic PZO ͑lattice parameters a = 5.88 Å, b = 11.787 Å, and c = 8.231 Å͒ and ferroelectric ͑FE͒ rhombohedral PZT ͑lattice parameters a = 4.118 Å and ␣ = 89.73°͒ thin films ͑and single crystals͒ are well known. [14][15][16][17][18][19][20] Whereas the ferroelectric PZT films show the well-known polarization-field hysteresis loop, a characteristic double loop is recorded from antiferroelectric PZO films due to a field-induced antiferroelectric-to-ferroelectric transition. During this transition the crystallography of PZO changes from orthorhombic to rhombohedral.…”

Self-Organized (100)-/(001)-Preferred Orientation in Pb(Zr,Ti)O 3 Films Grown on Polycrystalline Substrates by Metalorganic Chemical Vapor Deposition

“…When the film was deposited with a low deposition rate of 0.12 µm/h, 10 times lower than the present study, at the same deposition temperature, (111) orientation was observed owing to its local-epitaxial growth on (111)Pt grains [14]. However, local-epitaxial growth is considered to be difficult when the deposition rate increases as shown in the present study, because there is the growth rate limitation of the epitaxial growth.…”

Ferroelectric/Antiferroelectric Pb(Zr0.8Ti0.2)O3/PbZrO3 Epitaxial Multilayers: Growth and Thickness-Dependent Properties

“…Single-phase ferroelectric rhombohedral PZT and antiferroelectric orthorhombic PZO single crystals and thin films are well investigated [7][8][9][10][11][12][13]. Ferroelectric PZT films show the well-known ferroelectric hysteresis loop.…”