“…the anisotropy of the deposition rate, was reported for Pb(Zr, Ti)O 3 films deposited on (100) c , (110) c , and (111) c SrRuO 3 //SrTiO 3 substrates prepared by metal organic chemical vapor deposition. 42) In that case, the deposition rates of {100} c -and {110} c -oriented films were approximately 1.7 and 1.2 times larger than that of the {111} c -oriented film, similar to the present study for (K 0.88 Na 0.12 )NbO 3 films by hydrothermal deposition. This could be considered to be attributed to the crystal orientation dependence of the growth rate of the perovskite oxide film, perhaps due to the crystal structure and surface energy anisotropies.…”
{100}c-, {110}c- and {111}c-oriented epitaxial (K, Na)NbO3 thin films were grown at 240 °C on (100)cSrRuO3//(100)SrTiO3, (110)cSrRuO3//(110)SrTiO3, and (111)cSrRuO3//(111)SrTiO3 substrates by the hydrothermal method. Their film thicknesses increased with the deposition time and then eventually saturated at longer deposition times. Their saturated film thicknesses were mainly determined by their orientation and the order was {100}c-, {110}c- and {111}c-orientation regardless of any experimental conditions. These films consisted of grains with characteristic morphologies. All of the films exhibited similar ferroelectric and piezoelectric properties irrespective of the film orientation. The remnant polarizations (Pr) and coercive fields (Ec) of the {100}c-, {110}c- and {111}c-oriented films at the maximum electric field of 500 kV cm−1 were 31 μC cm−2 and 111 kV cm−1, 27 μC cm−2 and 94 kV cm−1, and 25 μC cm−2 and 110 kV cm−1, respectively, while their effective values of piezoelectric coefficient (d33) were approximately 31–33 pm V−1. Similar films are associated with its mixed domain structure.
“…the anisotropy of the deposition rate, was reported for Pb(Zr, Ti)O 3 films deposited on (100) c , (110) c , and (111) c SrRuO 3 //SrTiO 3 substrates prepared by metal organic chemical vapor deposition. 42) In that case, the deposition rates of {100} c -and {110} c -oriented films were approximately 1.7 and 1.2 times larger than that of the {111} c -oriented film, similar to the present study for (K 0.88 Na 0.12 )NbO 3 films by hydrothermal deposition. This could be considered to be attributed to the crystal orientation dependence of the growth rate of the perovskite oxide film, perhaps due to the crystal structure and surface energy anisotropies.…”
{100}c-, {110}c- and {111}c-oriented epitaxial (K, Na)NbO3 thin films were grown at 240 °C on (100)cSrRuO3//(100)SrTiO3, (110)cSrRuO3//(110)SrTiO3, and (111)cSrRuO3//(111)SrTiO3 substrates by the hydrothermal method. Their film thicknesses increased with the deposition time and then eventually saturated at longer deposition times. Their saturated film thicknesses were mainly determined by their orientation and the order was {100}c-, {110}c- and {111}c-orientation regardless of any experimental conditions. These films consisted of grains with characteristic morphologies. All of the films exhibited similar ferroelectric and piezoelectric properties irrespective of the film orientation. The remnant polarizations (Pr) and coercive fields (Ec) of the {100}c-, {110}c- and {111}c-oriented films at the maximum electric field of 500 kV cm−1 were 31 μC cm−2 and 111 kV cm−1, 27 μC cm−2 and 94 kV cm−1, and 25 μC cm−2 and 110 kV cm−1, respectively, while their effective values of piezoelectric coefficient (d33) were approximately 31–33 pm V−1. Similar films are associated with its mixed domain structure.
“…The film thickness of (100)/(001)-oriented PZT film on (111)Pt was larger than that of (111)-oriented one on (111) SRO from surface profile measurement, because it is generally understand that the growth rate of (100)/(001)-oriented PZT film was two times faster than that of (111)-oriented one [7]. The results of film orientation and film thickness are summarized in Fig.…”
Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.
“…Under these conditions, primarily (100)-/(001)oriented fiber-textured PZT films were obtained on (111)Pt/ TiO 2 /SiO 2 /(100)Si substrates. 19,21)…”
Section: Deposition Of Pzt Filmmentioning
confidence: 99%
“…Among the various techniques of PZT film deposition, such as sol-gel, 11) sputtering, 12) laser ablation, 13) and aerosol deposition, 14) metalorganic chemical vapor deposition (MOCVD) is one of the most suitable process for mass production because of its good step coverage, 15,16) the controllability of crystal orientation, 17,18) the high-deposition rate 19) and the relatively low deposition temperature. 9,20) In this study, the patterning of well-crystallized (100)-/ (001)-preferentially-oriented PZT and poorly-crystallized randomly-oriented PZT films was successfully carried out on (100)Si substrates directly by making patterned Pt bottom electrodes.…”
Pb(Zr,Ti)O 3 (PZT) films were prepared on Si substrates at 600 C by metalorganic chemical vapor deposition (MOCVD). Crystallinity of tetragonal PZT film was dramatically increased by making Pt bottom electrode layer on the Si substrate. Based on this observation, we succeeded in directly patterning PZT films having quite different crystal quality, i.e., well-crystallized (100)-/(001)-preferentially-oriented ones, and poorly-crystallized randomly-oriented ones, by pre-patterning Pt bottom electrodes. The achievement of the patterning of PZT films down a size of 1 mm was determined by scanning probe microscopy using a piezoresponse technique. As a result, we demonstrated the direct patterning of PZT films on Si substrates for the first time and introduced the possibility of directly patterning PZT films with good piezoelectric properties without post-deposition processes such as etching.
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