Density of states of InI:mTheoretical and experimental investigation

Kolinko, M. I.

doi:10.1103/physrevb.55.4007

Cited by 9 publications

(8 citation statements)

References 11 publications

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“…As a result, the optical-absorption edge appears predominantly due to intercation transitions. This situation is also typical for indium iodide [15]. Finally, the bandgap at low temperatures is formed by Tl + (In + ) ions, which are the nearest neighbours of I -ions.…”

Section: Resultsmentioning

confidence: 95%

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Photoluminescence in the solid solution In0.5Tl0.5I

Kashuba¹,

Zhydachevskyy²,

Semkiv³

et al. 2018

Ukr. J. Phys. Opt.

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Abstract. Photoluminescence (PL) emission spectra are studied for In x Tl 1-x I solid solution with x ≈ 0.5. Two broad bands located approximately at 1.6 and 2.2 eV are found and their physical mechanisms are discussed. The low-energy band has not been earlier detected in the pure InI compound but resembles that observed in TlI. Time decay of the PL in In 0.5 Tl 0.5 I is studied. Strong temperature dependence of the PL intensity is revealed. Optical absorption edge in In 0.5 Tl 0.5 I is found to be formed predominantly by inter-cation transitions. PL excitation spectra are measured for the light wavelengths 570 and 800 nm and their parameters are evaluated.

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Section: Resultsmentioning

confidence: 95%

“…Tl 7p) states. According to the results [5,15], one can also state that the smallest bandgap intervals are located at ZГ edges. As a result, the optical-absorption edge appears predominantly due to intercation transitions.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence in the solid solution In0.5Tl0.5I

Kashuba¹,

Zhydachevskyy²,

Semkiv³

et al. 2018

Ukr. J. Phys. Opt.

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“…1͑c͒, InI has a direct band gap on the H line ͑between T and Y points͒, which disagrees with previous calculations that show an indirect band gap. 18,19 On the other hand, indirect band gaps can be seen for InBr and InCl in Figs. 1͑b͒ and 1͑a͒.…”

Section: A Indium Halidesmentioning

confidence: 86%

Enhanced Born charges in III-VII,IV-VII2, andV-VII3compounds

Singh

2010

Phys. Rev. B

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We report electronic-structure and lattice dynamics calculations on selected III-VII, IV-VII 2 , and V-VII 3 compounds. The common characteristic of these largely ionic compounds is that their outmost cation-s states are fully occupied and thus the conduction-band states are derived from the more spatially extended cation-p states, resulting in significant cross-band-gap hybridization, which enhances Born effective charges substantially. The large Born charges cause large splitting between longitudinal and transverse optic phonon modes and large static dielectric constants resulting mostly from the lattice contribution. This can lead to effective screening of defects and impurities that would otherwise be strong carrier traps and recombination centers and may therefore have positive effects on the carrier transport properties in radiation detectors based on these soft-lattice halides.

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“…The masking effect on the weak exhibition of the structure of fundamental plasmons, that can be observed in the region 13-14 eV, where there are no structures in the R(E) spectra, is exerted by interband transitions of valent 4s halogen electrons and core 4d metal electrons. Their levels, according to the photoelectron spectroscopy data [8], are localized near -14 and -17 eV (the zero energy level being fixed at the valence band top) respectively, and they merge together into a wide band at ≈8 eV, in contrast to indium iodide single crystals where the corresponding maxima are energetically localized [9]. The exciton 4d In effect that is observed in Fig.…”

Section: Optical Spectra and Energies Of Plasmonsmentioning

confidence: 88%

Calculation of the spectra of characteristic electron losses in indium bromide

Kolinko¹,

Bovgyra²

2007

Semicond. phys. quantum electron. optoelectron.

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For the first time, the fundamental optical functions of single crystals of layered indium bromide are calculated on the basis of polarization-dependent reflection spectra at the liquid helium temperature in the energy region of 2−30 eV. Features of the spectra of bulk and surface characteristic losses are examined, and the bulk and surface plasmon energies have been obtained. The identification of the genetic origin of the principal structures in the spectra is accomplished. The correlation between the energies of long-wave plasmons and the energies of reflectivity minimum has been determined.

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Density of states of InI:mTheoretical and experimental investigation

Cited by 9 publications

References 11 publications

Photoluminescence in the solid solution In0.5Tl0.5I

Photoluminescence in the solid solution In0.5Tl0.5I

Enhanced Born charges in III-VII,IV-VII2, andV-VII3compounds

Calculation of the spectra of characteristic electron losses in indium bromide

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