Density Multiplication by Directed Self-assembly of Block Copolymer Binary Blends

Tada, Yutaka; Akasaka, Satoshi; Cheng, Feng; Yoshida, Hiroshi; Takenaka, Mikihito; Hasegawa, Hirokazu

doi:10.2494/photopolymer.22.229

Cited by 11 publications

(6 citation statements)

References 16 publications

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“…The magnetic recording industry contains the same impetus to form small, dense and regular patterns in magnetic materials to increase information storage density [156][157][158] .…”

Section: Electronics Industrymentioning

confidence: 99%

Block Copolymer Nanostructures and Their Applications: A Review

Singh

Thakre

et al. 2015

Polymer-Plastics Technology and Engineering

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Block copolymer nanostructures (BCPNs) are smart, intelligent and environment sensitive nanostructures designed to respond, in a controlled manner to an external stimulus. BCPNs are being extensively utilized in pharmaceutical field, nanotechnology and in forensics. Upon micellization the hydrophobic core of BCPNs region serves as a reservoir for hydrophobic medication, which can be loaded by chemical, physical, or electrostatic means. DNA combined with synthetic BCPN enhances the chemical and biological behaviors of bio-macromolecule and at the same time completely suppress undesirable properties. Novel NEMS/MEMS devices are being realized using BCPNs and DNA combined with inorganic materials nanoparticles and small organic moieties.

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“…The magnetic recording industry contains the same impetus to form small, dense and regular patterns in magnetic materials to increase information storage density [156][157][158] .…”

Section: Electronics Industrymentioning

confidence: 99%

Block Copolymer Nanostructures and Their Applications: A Review

Singh

Thakre

et al. 2015

Polymer-Plastics Technology and Engineering

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“…A lot of work has been reported about DSA materials as sub-20nm or even sub-10nm patterning materials. DSA is expected not only as the resist materials but also as the resist support material [10][11][12][13][14][15][16][17][18][19][20]. In this paper we focus on the DSA materials for lithography; block co-polymer, under layer, top coat and resist.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Materials for Semiconductor Lithography

Minegishi¹,

Naruoka²,

Nagai³

2013

J. Photopol. Sci. Technol.

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The Directed Self Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Block co-polymer, especially polystyrene-block-polymethylmethacrylate (PS-b-PMMA) is the standard DSA patterning material for lithography. However, the patterning limit of PS-b-PMMA is about 25nmP, and high-χ block co-polymer is necessary for sub 20nmP patterning. Not only block co-polymer, but also underlayer (neutral layer, pinning layer), top coat, and directing pattern forming photoresist are also necessary. In this paper, recent progress of directed self assembly materials and supporting materials are described.

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“…Self Aligned Double Patterning [4] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [5] Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] [26][27][28][29][30][31][32][33][34]. Application of DSA materials may extend immersion ArF and support the rise of EUV.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

Minegishi¹,

Namie²,

Izumi³

et al. 2013

J. Photopol. Sci. Technol.

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The Directed Self-Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Polystyreneb-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) is a typical material used in DSA, but more advanced materials are required for achieving patterning less than 10 nm in size. High-χ block copolymers are being researched as next generation PS-b-PMMA material successors. Polymers with high-χ produce smaller pattern sizes than PS-b-PMMA. However, doing DSA with these high-χ materials requires a special method to separate one phase of BCPsuch as phase separation in solvent. We have done further research to improve high-χ materials to enable better DSA technology. Here we report 8.4 nm half-pitch line patterns were formed with our high-χ block co-polymer, annealing under air. DSA is a candidate for next generation lithography. However, DSA materials are not used alone. DSA materials are always used with guide pattern to "direct" self assembly materials. Currently ArF resist is well studied as guide pattern. ArF resist is extended to use further generation, but the required resolution level is already severe for 193nm patterning. Employment of blend DSA could improve the ArF pattern profile.

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Density Multiplication by Directed Self-assembly of Block Copolymer Binary Blends

Cited by 11 publications

References 16 publications

Block Copolymer Nanostructures and Their Applications: A Review

Block Copolymer Nanostructures and Their Applications: A Review

Directed Self Assembly Materials for Semiconductor Lithography

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

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