Density functional theory study on the reducing agents for atomic layer deposition of tungsten using tungsten chloride precursor

Hidayat, Romel; Chowdhury, Tanzia; Kim, Yewon; Kim, Seongyoon; Mayangsari, Tirta Rona; Kim, Soohyun; Lee, Wonjun

doi:10.1016/j.apsusc.2020.148156

Cited by 11 publications

(1 citation statement)

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“…Tungsten (W), due to high melting point, high electrical conductivity, and superior accessibility, [1][2][3][4][5] has been widely used as the word line metal film of 3D NAND flash devices, dynamic random access memory (DRAM) devices, and phase-change memory (PCM) devices [6][7][8][9][10] for decades. Molybdenum (Mo) and tungsten are subgroup six (VIB) elements and have similar physical and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

Tensile and Compressive Mechanical Properties of Polycrystalline Tungsten–Molybdenum Alloy

Zhang

et al. 2022

Physica Status Solidi (a)

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To clarify the mechanical performance of word line metal film, molecular dynamics simulations to explore the tensile and compressive responses of W–Mo alloys are utilized. The results reveal that all the mechanical parameters, including Young's modulus, yield strength, flow stress, and platform stress, decrease linearly by about 13–20% with the increase in Mo concentration. The development of the amorphous region and grain boundaries (GBs) dominates the deformation process of W–Mo alloys under tensile and compressive loadings. A large number of body‐centered cubic atoms transforms into amorphous atoms during the loading process. The average shear strain is independent of Mo concentration, and the value of the W50Mo50 sample under tension and compression rises to 1.11 and 1.98, respectively, as the strain increases from 0 to 0.6. In addition, the temperature sensitivity of mechanical features is independent of the concentration of Mo. The results may provide guidance and reference for the industrial application of W–Mo metal films in semiconductor manufacturing.

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