Densification of silicon carbide using oxy-nitride additives for space-based telescope mirror applications

Kumar, Ritesh; Shukla, A.K.; Babu, Sankaranarayanan; Sivakumar, D.; Gandhi, Ashutosh

doi:10.1117/1.3610987

Cited by 4 publications

(1 citation statement)

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“…The cubic polytype of silicon carbide (β‐SiC) has an extreme range of thermal, chemical, and electronic properties that make it an attractive material for high‐ and medium‐power semiconductor devices, and also for application of space mirror . Most importance is that β‐SiC can be grown on silicon substrates hence there is significant interest for low‐cost, large‐size β‐SiC wafers for microelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Growth Mechanism and Defects of <111>‐Oriented β‐SiC Films Deposited by Laser Chemical Vapor Deposition

Zhang

et al. 2014

J. Am. Ceram. Soc.

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Two kinds of <111>-oriented b-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size () as a function of the distance from substrate (h) follows power laws of / h 0.62 and / h 0.71 , respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike b-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality <111>-oriented b-SiC.G. Brennecka-contributing editor Manuscript No. 34552.

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Section: Introductionmentioning

confidence: 99%