2009
DOI: 10.1088/0957-4484/20/41/415205
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Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra

Abstract: Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 10(9) cm(-2)) are demonstrated. The QDs exhibit high quality photoluminescence spectra with inhomogeneous broadening of only 6.5 meV. The QD dipole moment was estimated through the analysis of time-resolved photoluminescence measurements. Such ordered QD arrays should be useful for applications in active nanophotonic systems such a… Show more

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Cited by 26 publications
(16 citation statements)
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“…To better control the coupling behavior and the gain contribution of a single resonant emitter, integrating a single self-assembled QD into a high-quality microcavity will be interesting in further optimizations. However, this integration is a complicated task that requires sophisticated techniques, such as site-controlled growth [11][12][13][14][15] or in situ lithography [16][17][18]. Deterministically-positioned QDs have been successfully applied in the past to realize high-quality single-photon sources [19,20], but up until now have not been demonstrated to provide sufficient optical gain to reach the lasing threshold in a single-QD device.…”
Section: Introductionmentioning
confidence: 99%
“…To better control the coupling behavior and the gain contribution of a single resonant emitter, integrating a single self-assembled QD into a high-quality microcavity will be interesting in further optimizations. However, this integration is a complicated task that requires sophisticated techniques, such as site-controlled growth [11][12][13][14][15] or in situ lithography [16][17][18]. Deterministically-positioned QDs have been successfully applied in the past to realize high-quality single-photon sources [19,20], but up until now have not been demonstrated to provide sufficient optical gain to reach the lasing threshold in a single-QD device.…”
Section: Introductionmentioning
confidence: 99%
“…The membrane wafer consisted of a 1  μm thick sacrificial AlGaAs layer (Al content ~0.7) overgrown with a 265  nm thick GaAs membrane layer, on which triangular arrays of inverted pyramids with 400  nm pitch and 300  nm side length were fabricated using electron beam lithography (EBL) and wet chemical etching 36 . The grown heterostructure consisted of a 4.3  nm thick GaAs buffer layer followed by a 0.2  nm thick layer of In 0.2 Ga 0.8 As resulting in the formation of a single symmetric 37, 38 QD at the apex of each pyramidal pit.…”
Section: Methodsmentioning
confidence: 99%
“…In that case, pyramid size and distance are in the sub-100nm range, which requires careful attention to surface preparation and growth rate adjustments. Pyramidal QDs with pitch down to 150nm exhibiting good optical properties were prepared using electron beam lithography for the substrate-patterning step [7].…”
Section: Fabrication and Structure Of V-groove Qwrs And Pyramidal Qdsmentioning
confidence: 99%