Demonstration of T-Shaped Channel Tunnel Field-Effect Transistors

Goswami, Bijoy; Bhattachariee, Disha; Dash, Dinesh Kumar; Bhattacharya, Ayan; Sarkar, Subir Kumar

doi:10.1109/iementech.2018.8465213

Cited by 9 publications

(1 citation statement)

References 23 publications

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“…A lot of research has been devoted toward resolving these problems which includes gate engineered TFETS for plummeting the ambipolar current (Kao et al , 2012; Kumar et al , 2017), hetero-junction TFETs (Kumar et al , 2018; Chander et al , 2017) instead of the regular homojunction structure and high- k dielectric under the gate to increase the ON-state current (Chander et al , 2017; Kumar et al , 2016). Keeping the material system unchanged, newer device geometries like L-shaped channel TFETs (LTFETs) (Kim et al , 2016; Yang, 2016) and T-shaped channels (Goswami et al , 2018) have shown improved I ON but is severely affected by high levels of ambipolar conduction. Also, altering the doping concentration at the drain end, adding pockets help reduce ambipolarity but taking a toll on the ON-current (Narang et al , 2012).…”

Section: Introductionmentioning

confidence: 99%

Novel center potential based analytical sub-threshold model for dual metal broken gate TFET

Chowdhury

Sarkar

Mahapatra

et al. 2020

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Purpose The purpose of this paper is to present an improved model based on center potential instead of surface potential which is physically more relevant and accurate. Also, additional analytic insights have been provided to make the model independent and robust so that it can be extended to a full range compact model. Design/methodology/approach The design methodology used is center potential based analytical modeling using Psuedo-2D Poisson equation, with ingeniously developed boundary conditions, which help achieve reasonably accurate results. Also, the depletion width calculation has been suitably remodeled, to account for proper physical insights and accuracy. Findings The proposed model has considerable accuracy and is able to correctly predict most of the physical phenomena occurring inside the broken gate Tunnel FET structure. Also, a good match has been observed between the modeled data and the simulation results. Ion/Iambipolar ratio of 10^(−8) has been achieved which is quintessential for low power SOCs. Originality/value The modeling approach used is different from the previously used techniques and uses indigenous boundary conditions. Also, the current model developed has been significantly altered, using very simple but intuitive technique instead of complex mathematical approach.

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