Demonstration of non-invasive probing of CMOS devices with aluminum pads at frequencies up to 500 GHz

Sakamaki, Ryo; Kishikawa, Ryoko; Tojima, Yuya; Kon, Seitaro; Somada, Ichiro; Matsui, S.; Taoka, G.; Yoshida, Takafumi; Amakawa, Shuhei; Fujishima, Minoru

doi:10.1109/arftg54656.2022.9896502

Cited by 3 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thereafter, tanδ of the silicon wafers was extracted using an EM simulation approach, which is often used for the ring-resonator method, 9) and in our previous study. 27) 3. Results and discussion 3.1.…”

Section: Experimental Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Sakamaki

Kobayashi

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this study, accuracy improvements in estimations of electrical properties of millimeter-wave devices were demonstrated using the probe-backside reflection method at frequencies up to 100 GHz. The dielectric properties of silicon wafers, with nominal resistivities from 1 Ωcm to 151 kΩcm, were preliminarily evaluated using the PBR method to determine the material parameters used in the electromagnetic simulation. The S-parameter of the mmW devices fabricated on the silicon wafers was calculated using the simulation. The calculated S-parameter was well accorded with the measured S-parameter of the devices fabricated on silicon wafers. The PBR method can provide more suitable material parameters than those calculated using the Drude model for resistive wafers with resistivities greater than 3 kΩcm. However, the accuracy was degraded compared to the Drude model in the most lossy 1–100 Ωcm wafer.

show abstract

Section: Experimental Methodsmentioning

confidence: 99%

“…The PBR requires precise control of the RF probe position during the measurement process. [27][28][29][30][31][32][33][34] In this study, the PBR method was applied to determine the material parameters of silicon wafers for EM simulation.…”

Section: Introductionmentioning

confidence: 99%

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Sakamaki

Kobayashi

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…On the other hand, the PBR method generates pseudoresonance by controlling the position of the hf probe in precision on a coplanar waveguide (CPW). [16][17][18][19][20][21] The PBR method can suppress the dimensional error of a resonator because it is determined by the accuracy of the probe position, which is generally smaller than the manufacturing error of the resonator. In addition, the author developed an original measurement technique for minimizing variation in probe position to less than 1 μm.…”

Section: Introductionmentioning

confidence: 99%

Study on measurement capability of probe-backside reflection method for evaluation of dielectric materials

Sakamaki

2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This study clarifies the measurement capability of the probe-backside reflection (PBR) method for the evaluation of dielectric materials. Because the PBR method requires the preparation of a coplanar waveguide (CPW) on a material-under-test (MUT), the measurement capability is limited not only by the dielectric properties of the MUT but also by the limitations in the CPW design. In this study, the measurement capability of the PBR method was estimated to be limited up to 15 for the dielectric permittivity, and from 3 × 10-3 to 2 × 10-1 for the dielectric loss tangent, in the frequency range up to 300 GHz.

show abstract

Measurement and modeling for sub-THz CMOS design: Challenges and opportunities

Amakawa

2023

2023 Asia-Pacific Microwave Conference (APMC)

View full text Add to dashboard Cite

Demonstration of non-invasive probing of CMOS devices with aluminum pads at frequencies up to 500 GHz

Cited by 3 publications

References 10 publications

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Study on measurement capability of probe-backside reflection method for evaluation of dielectric materials

Measurement and modeling for sub-THz CMOS design: Challenges and opportunities

Contact Info

Product

Resources

About