Demonstration of n-MOSFET operation and internal charge analysis of SiO&lt;sub&gt;2&lt;/sub&gt;/Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; gate dielectric on (111) oriented 3C-SiC

Oka, Ryusei; Yamamoto, Kazuhiko; Wang, D.; Nakashima, Hisashi; Hishiki, Shigeomi; Kawamura, K.

doi:10.7567/ssdm.2019.ps-4-28

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“…Furthermore, in order to clarify the origin of the V FB shift, we studied internal charges and interfacial dipole of this SiO 2 /Al 2 O 3 /3C-SiC gate structure and have reported in SSDM2019. 25) In this paper, details of experimental and results are shown again, and additional experimental results and discussions are described. Firstly, IL insertion is also effective to reduce gate leakage current.…”

Section: Introductionmentioning

confidence: 99%

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis

Oka¹,

Yamamoto²,

Akamine³

et al. 2020

Jpn. J. Appl. Phys.

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Metal-oxide-semiconductor (MOS) capacitors with various gate dielectrics were fabricated on (111) oriented n-type 3C-SiC. Deposited SiO2 by sputtering without an interlayer (IL) and thermally grown SiO2 show deteriorated capacitance–voltage (C–V) characteristics and high interface trap density (Dit) over 1011–1012 cm−2 eV−1. By inserting an IL, C–V and leakage current characteristics are improved. In particular, an atomic layer deposited (ALD) Al2O3-IL is suitable for 3C-SiC, which successfully achieved low Dit in the order of 1010 cm−2 eV−1. MOS capacitor with the same gate dielectric on n-Si shows contradictory characteristics. Structural analysis shows it is considered the flat and uniform interface at Al2O3/3C-SiC leads good electrical characteristics. The 3C-SiC MOS capacitor with Al2O3-IL showed slightly negative flatband voltage and it is induced by negative interfacial dipole generated at the Al2O3/3C-SiC interface. This 3C-SiC MOS structure can be fabricated at low process temperature (<600 °C), which means the overall process for device application can be designed more flexibly.

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Section: Introductionmentioning

confidence: 99%

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis

Oka¹,

Yamamoto²,

Akamine³

et al. 2020

Jpn. J. Appl. Phys.

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Demonstration of n-MOSFET operation and internal charge analysis of SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> gate dielectric on (111) oriented 3C-SiC

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High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis

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Demonstration of n-MOSFET operation and internal charge analysis of SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> gate dielectric on (111) oriented 3C-SiC

Cited by 1 publication

References 0 publications

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis

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High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis