2008
DOI: 10.1021/ja800378b
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Demonstration of Molecular Assembly on Si (100) for CMOS-Compatible Molecule-Based Electronic Devices

Abstract: In this work, we establish the potential of a UV-promoted direct attachment of alkanes with alcohol and thiol linkers to the silicon (100) surfaces for use in molecular electronic devices with increased potential for integration with existing CMOS technologies. Characterization of the self-assembled monolayers via Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and X-ray photoemission spectroscopy shows that the films assembled on the Si (100) are comparable in quality, aliphatic monolayer… Show more

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Cited by 32 publications
(33 citation statements)
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“…The Si(111) face, and not the industry-used (100) plane, is preferred for wet chemistry because it can be made atomically smooth over a macroscopic area. [10,89] In any case, comparable transport characteristics were observed for MOMS on either Si(111) [97] or Si(100). [88,89] Smoothing is done with 40% NH 4 F and 2% HF for (111) and (100) planes, respectively.…”
Section: Sources Of Defects and How To Avoid Themsupporting
confidence: 52%
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“…The Si(111) face, and not the industry-used (100) plane, is preferred for wet chemistry because it can be made atomically smooth over a macroscopic area. [10,89] In any case, comparable transport characteristics were observed for MOMS on either Si(111) [97] or Si(100). [88,89] Smoothing is done with 40% NH 4 F and 2% HF for (111) and (100) planes, respectively.…”
Section: Sources Of Defects and How To Avoid Themsupporting
confidence: 52%
“…[10,89] In any case, comparable transport characteristics were observed for MOMS on either Si(111) [97] or Si(100). [88,89] Smoothing is done with 40% NH 4 F and 2% HF for (111) and (100) planes, respectively. [11,88] For work with monolayers, substrate smoothness should extend from a few up to hundreds of mm 2 , depending on the size of the contact, a situation that is very different from that tested in STM/AFM studies.…”
Section: Sources Of Defects and How To Avoid Themsupporting
confidence: 52%
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“…changes in the band-bending) and alter the conductivity of the substrate. 53,207 This molecular gate 129 approach has stimulated vast research, 43,63,64,129,278 but despite encouraging recent reports, 279 at present the development of real-world molecular electronics, such as high density memories, 40,41 remain a long-term target. Serious practical obstacles toward the fabrication of a real device still exist.…”
Section: Summary and Perspectivesmentioning
confidence: 99%