Demonstration of Integrated Micro-Electro-Mechanical Relay Circuits for VLSI Applications

Spencer, Matthew; Chen, F; Wang, Cheng C.; Nathanael, Rhesa; Fariborzi, Hossein; Gupta, Abhinav; Kam, Hei; Pott, V.; Jeon, Jong-June; Liu, Tsu‐Jae King; Marković, Dejan; Alon, Elad; Stojanović, Vladimir

doi:10.1109/jssc.2010.2074370

Cited by 164 publications

(124 citation statements)

References 16 publications

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“…This differs from NMOS-style singleswitch oscillators achieved in the past [18], which use a pull-up resistor instead of an additional, complementing switch.…”

Section: Three-stage Ring Oscillatormentioning

confidence: 95%

“…Analogous to the p-type and n-type transistors in CMOS logic, a logic cell consists of a pull-up and pulldown network composed of NEM switches whose respective complementary pair is connected by a common gate as one of the inputs of the Boolean logic function. This style of logic differs from alternative topologies that can be obtained from 4-/5-/6-terminal devices [10,13,18,19]. However, where we lose in terms of the capability to use more unique logic styles, we gain in terms of better scalability and optimization at the device level [4,20].…”

Section: Standard Logic Cell Designmentioning

confidence: 99%

“…Several research groups have been or are currently investigating the design and applications of NEM switches for logic applications, including but not limited to [6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Ayala

Grogg

Bazigos

et al. 2015

Solid-State Electronics

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, M. et al. (2015) Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts Abstract Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring oscillator built using cell-level digital logic elements based on curved NEM switches. The ring oscillator core occupies an area of 30 µm × 10 µm using 6 NEM switches. Each NEM switch device has a footprint of 5 µm × 3 µm, an air gap of 60 nm and is coated with amorphous carbon (a-C) for reliable operation. The ring oscillator operates at a frequency of 6.7 MHz, and confirms the simulated inverter propagation delay of 25 ns. The successful fabrication and measurement of this demonstrator are a key milestone on the way towards an optimized, scaled technology with sub-nanosecond switching times, lower operating voltages and VLSI implementation.

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“…This differs from NMOS-style singleswitch oscillators achieved in the past [18], which use a pull-up resistor instead of an additional, complementing switch.…”

Section: Three-stage Ring Oscillatormentioning

confidence: 95%

Section: Standard Logic Cell Designmentioning

confidence: 99%

See 1 more Smart Citation

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Ayala

Grogg

Bazigos

et al. 2015

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…NEM relays are composed of 4 terminals like MOSFET devices. However, in NEM relays, the mechanical channel is actuated by electrostatic force, instead of the electrical channel [2][3][4][5][6]. When the channel is turned off in NEM relays, it is disconnected mechanically from the both source and drain.…”

Section: Introductionmentioning

confidence: 99%

“…By doing so, the 'off' leakage current can be ideally zero that is a very big advantage of NEM relays over MOSFET devices suffering a large amount of 'off' leakage. The demerit of NEM relays is that its electrostatic actuation of mechanical channel causes much longer switching time than the electrical channel's fast switching time [3,6]. Considering both the advantage and disadvantage of NEM relays, the NEM-relay circuits can be considered very suitable to applications that are energy-efficient and slow, such as power-related circuits [7,8].…”

Section: Introductionmentioning

confidence: 99%

Process-Variation-Adaptive Charge Pump Circuit using NEM (Nano-Electro-Mechanical) Relays for Low Power Consumption and High Power Efficiency

Byeon¹,

Shin²,

Song³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-For some low-frequency applications such as power-related circuits, NEM relays have been known to show better performance than MOSFETs. For example, in a step-down charge pump circuit, the NEM relays showed much smaller layout area and better energy efficiency than MOSFETs. However, severe process variations of NEM relays hinder them from being widely used in various low-frequency applications. To mitigate the process-variation problems of NEM relays, in this paper, a new NEMrelay charge pump circuit with the self-adjustment is proposed. By self-adjusting a pulse amplitude voltage according to process variations, the power consumption can be saved by 4.6%, compared to the conventional scheme without the self-adjustment. This power saving can also be helpful in improving the power efficiency of the proposed scheme. From the circuit simulation of NEM-relay charge pump circuit, the efficiency of the proposed scheme is improved better by 4.1% than the conventional.

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High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

Song

Ahn

Kim

et al. 2014

Small

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A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.

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Demonstration of Integrated Micro-Electro-Mechanical Relay Circuits for VLSI Applications

Cited by 164 publications

References 16 publications

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Process-Variation-Adaptive Charge Pump Circuit using NEM (Nano-Electro-Mechanical) Relays for Low Power Consumption and High Power Efficiency

High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

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