High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

Song, Yong-Ha; Ahn, Sang-Joon; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi‐Sun; Pi, Jae‐Eun; Ko, Seung‐Deok; Choi, Kwang-Wook; Park, Sang‐Hee Ko; Yoon, Jun‐Bo

doi:10.1002/smll.201402841

Cited by 12 publications

(8 citation statements)

References 55 publications

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“…Thin-film transistors (TFTs) based on organic or metal oxide semiconductors have received great interest as low-cost alternatives to traditional silicon-based devices due to their large-area capability and relatively low processing temperatures. − Practical circuit designs require the integration of p - and n -type TFTs to fabricate complementary logic devices that have low power consumption and provide robust device operation. , Organic TFTs are particularly useful for p -type components, while metal oxide TFTs are promising n -type counterparts. − Recently, significant efforts have been devoted to developing high-performance solution-processed metal oxide semiconductors, such as In 2 O 3 , InZnO, and InGaZnO. − However, all these materials contain a considerable amount of indium, which is scarce and expensive, making widespread utilization of indium-containing materials in mass-produced electronic devices unlikely. − It is therefore desirable to develop metal oxide TFTs based on resource-friendly materials, such as ZnO, which is naturally abundant and cost-efficient …”

Section: Introductionmentioning

confidence: 99%

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters

Jeong

Yun

et al. 2016

ACS Appl. Mater. Interfaces

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Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.

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Section: Introductionmentioning

confidence: 99%

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters

Jeong

Yun

et al. 2016

ACS Appl. Mater. Interfaces

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“…Consequently, owing to this strain transduction mechanism, internal voltage amplifies, and the device achieve steep SS below 60 mv/dec This study provides a numerical advancement for postsilicon, energy efficient, and scalable technology to harvest future low-power devices. 256 Several others' steepslopes device concepts have been reported, for instance impact ionization-based FETs, 257,258 MEMS logic switch, 259 and spinbased FETs. 260,261 Among all proposed devices, TFETs are most promising as they experimentally demonstrate sub-60 mV/dec.…”

Section: Other Competitive Concepts For Steep-slope Transistorsmentioning

confidence: 99%

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Nazir

Rehman

Park

2020

ACS Appl. Mater. Interfaces

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Conventional field-effect transistors (FETs) have long been considered a fundamental electronic component for a diverse range of devices. However, nanoelectronic circuits based on FETs are not energy efficient because they require a large supply voltage for switching applications. To reduce the supply voltage in standard FETs, which is hampered by the 60 mV/decade limit established by the subthreshold swing (SS), a new class of FETs have been designed, tunnel FETs (TFETs). A TFET utilizes charge-carrier transportation in device channels using quantum mechanical based band-to-band tunneling despite of conventional thermal injection. The TFETs fabricated with thin semiconducting film or nanowires can attain a 100-fold power drop compared to complementary metal−oxide−semiconductor (CMOS) transistors. As a result, the use of TFETs and CMOS technology together could ameliorate integrated circuits for low-power devices. The discovery of two-dimensional (2D) materials with a diverse range of electronic properties has also opened new gateways for condensed matter physics, nanotechnology, and material science, thus potentially improving TFET-based devices in terms of device design and performance. In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices. Lastly, future prospects are presented for the improvement of device design and the working efficiency of TFETs.

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“…Many efforts have been made to modify the SS in recent years, including altering the carrier injection mode from diffusion to tunneling-based mechanisms 3 – 6 or mechanical switching operations 7 , 8 . One such mechanism for overcoming the aforementioned limitation is utilizing impact ionization 9 – 11 .…”

Section: Introductionmentioning

confidence: 99%

A steep switching WSe2 impact ionization field-effect transistor

Choi

Kang

et al. 2022

Nat Commun

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The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport represent two fundamental barriers towards the reduction of the subthreshold slope (SS) and the optimization of the energy consumption of field-effect transistors. In this study, we report the realization of steep-slope impact ionization field-effect transistors (I2FETs) based on a gate-controlled homogeneous WSe2 lateral junction. The devices showed average SS down to 2.73 mV/dec over three decades of source-drain current and an on/off ratio of ~106 at room temperature and low bias voltages (<1 V). We determined that the lucky-drift mechanism of carriers is valid in WSe2, allowing our I2FETs to have high impact ionization coefficients and low SS at room temperature. Moreover, we fabricated a logic inverter based on a WSe2 I2FET and a MoS2 FET, exhibiting an inverter gain of 73 and almost ideal noise margin for high- and low-logic states. Our results provide a promising approach for developing functional devices as front runners for energy-efficient electronic device technology.

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High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

Cited by 12 publications

References 55 publications

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

A steep switching WSe2 impact ionization field-effect transistor

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