Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts

Lee, SeungGeun; Forman, Charles A.; Kearns, Jared; Leonard, John T.; Cohen, Daniel; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1364/oe.27.031621

Cited by 37 publications

(24 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The VCSEL market will be further expanded when visible-emitting GaN-based VCSELs are commercialized. This will soon be a reality based on the recent immense improvement in performance − enabled by advances in thermal management, ,, optical confinement, ,, mirror reflectivity, ,, and electrical injection. , Part of these advances may also boost the development of ultraviolet (UV) AlGaN-based VCSELs, sources with a higher brightness than LEDs. UV light is used for water and surface disinfection, fluorescence excitation, curing, and medical treatment, and the realization of UV VCSELs could, for example, enable energy-efficient, high-throughput, and compact water purification systems based upon 2D-laser arrays.…”

mentioning

confidence: 99%

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

et al. 2020

View full text Add to dashboard Cite

Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280–320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320–400 nm) to UVC (<280 nm).

show abstract

mentioning

confidence: 99%

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Current group-III nitride light emitting technology is moving towards new frontiers. Material-related developments are ongoing in the areas of polarization-assisted carrier concentration enhancement for ultraviolet emitters [76], tunnel junctions, and porous reflectors for blue vertical-emitting lasers [390,391], and QDs and non-or semi-polar platforms for increased efficiency at green wavelengths [116,314], including strain compensating engineering methods used to produce red-emitting InGaN-based devices [42]. While there is room for improvement in each of these segments, the device community has an interest to develop visible lasers into photonic integrated circuits [254,[392][393][394].…”

Section: Discussionmentioning

confidence: 99%

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

show abstract

“…Fabrication of 1D and especially 2D arrays could help realize not only compact, high-power emitters needed for Digital Light Processing (DLP) projectors [ 7 , 8 ] and automobile headlights [ 5 , 6 ] but also lower-power systems such as addressable arrays of laser diode for fast direct visual telecommunication. The goals presented above could be in part achieved by using arrays of Vertical Cavity Surface-Emitting Lasers (VCSELs) [ 15 , 16 ]. These devices have light emission perpendicular to the plane of the chip [ 17 ] and circular beam cross section facilitating the light coupling to optical fibers [ 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

et al. 2023

View full text Add to dashboard Cite

In this study, we propose a solution for realization of surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The presented system consists of a horizontal cavity lasing section adjoined with beam deflecting section in the form of 45° inclined planes. They are placed in the close vicinity of etched vertical cavity mirrors that are fabricated by Reactive Ion Beam Etching. The principle of operation of this device is confirmed experimentally; however, we observed an unexpected angular distribution of reflected rays for the angles lower than 45°, which we associate with the light diffraction and interference between the vertical and deflecting mirrors. The presented solution offers the maturity of edge-emitting laser technology combined with versatility of surface-emitting lasers, including on-wafer testing of emitters and addressability of single light sources.

show abstract

Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts

Cited by 37 publications

References 32 publications

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

Contact Info

Product

Resources

About