Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers

Kearns, Jared; Back, Joonho; Cohen, Daniel; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1364/oe.27.023707

Cited by 21 publications

(10 citation statements)

References 31 publications

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“…1) Since the first demonstration of an electrically injected GaN VCSEL in 2008, 2) multiple groups have demonstrated a variety of short to medium cavity designs (effective cavity length L eff < 3 μm). [3][4][5][6][7][8][9][10][11] However, GaN VCSELs struggle with self-heating due to higher input power requirements and high optical losses from p-GaN and current spreaders, 12) as well as poor heatsinking due to the typically low thermal conductivities of the bottomside distributed Bragg reflectors (DBRs). 13) These issues result in low thermal rollover and low device lifetimes.…”

Section: Society Of Applied Physics By Iop Publishing Ltdmentioning

confidence: 99%

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Palmquist,

Kearns,

Gee

et al. 2023

Appl. Phys. Express

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We report long cavity (65λ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside dielectric concave mirror, an ion implanted current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 10 μm aperture and a curved mirror with a radius of curvature of 120 μm had a threshold current density of 14 kA cm−2, and a maximum output power of 370 μW for a lasing mode at 404.5 nm. The longitudinal performance has a side-mode suppression ratio of 30 dB up to a current density of approximately 40 kA cm−2. Multiple transverse mode profiles are observed across several devices.

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Section: Society Of Applied Physics By Iop Publishing Ltdmentioning

confidence: 99%

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Palmquist,

Kearns,

Gee

et al. 2023

Appl. Phys. Express

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“…Gallium nitride VCSELs with curved dielectric distributed Bragg reflector (DBR) and B ion implantation techniques have been investigated for carrier and lateral optical confinement. 7−10 Semipolor GaN blue VCSEL devices with a buried tunnel junction design and Al ion implantation were also demonstrated to discuss polarization 11 and filamentary lasing. 12 The Al ion, 13 the He ion, 14 and the Mn ion 15,16 as the implantation sources were utilized to change the electrical and optical properties, including refractive index and extinction coefficient in the GaN-based epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

“…For the ion implantation methods on GaN materials, H + -implanted RC-LED structures, , Mg + -implanted current blocking layer adoption, embedded void structures via Si-implanted GaN templates, and P ion implantation to improve Mg dopant activation in a p-GaN layer have been reported for light output power enhancement. Gallium nitride VCSELs with curved dielectric distributed Bragg reflector (DBR) and B ion implantation techniques have been investigated for carrier and lateral optical confinement. − Semipolor GaN blue VCSEL devices with a buried tunnel junction design and Al ion implantation were also demonstrated to discuss polarization and filamentary lasing . The Al ion, the He ion, and the Mn ion , as the implantation sources were utilized to change the electrical and optical properties, including refractive index and extinction coefficient in the GaN-based epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation

Wang

Hsieh

et al. 2023

ACS Appl. Opt. Mater.

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Cavity mode-matching InGaN resonant-cavity light-emitting diodes (RC-LEDs) with aperture size-dependent emission have been demonstrated through nitrogen ion (N+) implantation and electrochemical wet etching processes. The RC-LED structure consisted of 570 nm-depth ion-implanted regions and an embedded 17-pair nanoporous-GaN/n-GaN distributed Bragg reflector (DBR) outside the aperture, while there existed a full 20-pair DBR structure within the aperture regions. Shorter and mode-matching cavity lengths were fabricated, confirmed by transmission electron microscopy and angle-resolved photoluminescence spectra inside the aperture area without subjecting to the N+ implantation. By reducing the aperture sizes, higher current density and narrower far-field electroluminescence emission patterns were observed in the RC-LED with an aperture size of 40 μm-diameter. These results demonstrate that the cavity mode-matching RC-LEDs with optical/electrical confinements and controllable cavity length mismatch features can be applied in a wide range of optoelectronic-based device applications.

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“…The group from the University of California in Santa Barbara (UCSB) develops nitride VCSELs with dual dielectric DBRs [4,5]. A VCSEL presented in [4] will be investigated in this paper.…”

Section: Introductionmentioning

confidence: 99%

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Śpiewak¹,

Wasiak²,

Sarzała³

2020

Optica Applicata

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This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing wave anti-node, and positioning of the active area at different anti-nodes are considered.

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Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers

Cited by 21 publications

References 31 publications

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

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