Demonstration of aluminum-free metamorphic InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on GaAs substrates

Abstract

We report, for the first time, the successful fabrication of aluminum-free metamorphic (MM) InP/In 0 53 Ga 0 47 As/InP double heterojunction bipolar transistors (DHBTs) on GaAs substrates with a linearly graded In Ga 1 P buffer grown by solid-source molecular beam epitaxy (SSMBE). Device with 5 5 m 2 emitter displays a peak current gain of 40 and a common-emitter breakdown voltage (BV CEO ) higher than 9 V, a current gain cut-off frequency ( ) of 48 GHz and a maximum oscillation frequency ( max ) of 42 GHz. A minimum noise figure of 2.9 dB and associated gain of 19.5 dB were measured at a collector current level of 2.6 mA at 2 GHz. Detailed analysis suggests that the degradation of the base-emitter heterojunction interface and the increase of bulk recombination are the most probable causes for the poorer device performance of the current metamorphic HBTs compared to the lattice-matched HBTs.

A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz

“…All measurements were carried out on a wafer using Cascade Microtech's Air-Coplanar Probes ACP50-GSG-100. Details of the device structure and fabrication technique have been described elsewhere [20,22].…”

Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination ofT- andπ-models up to 110 GHz

“…Once the parasitic elements (PAD capacitances, feedline inductances, and ohmic contact resistances) are known, the extraction of the intrinsic parameters can be carried out using the following procedure. Details of the device structure and fabrication technique for 5×5 μm 2 InP/InGaAs DHBTs have been described elsewhere [17,18].…”

An empirical DC to high-frequency model for InP/InGaAs HBTs

“…To illustrate the above method, we present the extracted model parameters for several 5 Â 5 μm 2 InP/InGaAs DHBTs, whose processing and epitaxial structure have been published in Wang et al (2000). The extracted extrinsic model parameters are summarised in Table 1.…”