Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination ofT- andπ-models up to 110 GHz

Abstract

A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors is presented in this paper. This method combines the advantages of conventional T-and π-type equivalent-circuit topologies. All the equivalent circuit elements are only extracted analytically from S-parameter data without any numerical optimization. The agreements between the measured and the model-calculated data are excellent in the frequency range of 0.1-110 GHz.

An improved small signal model of InP HBT for millimeter‐wave applications

“…The extrinsic and intrinsic model parameters are given in Reference 9. After parameter extraction, the value of the collector resistance R c is 16 Ω.…”

Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

“…The hybrid− π small‐signal equivalent circuit model after de‐embedding is shown in Figure 1, [ 1 ] where R bi and R π is the intrinsic base resistance and base‐emitter resistance, respectively. C π is the intrinsic base‐emitter capacitance and g m is trans‐conductance [ 6 ] . C μ and C ex is the intrinsic and extrinsic base‐collector capacitance, respectively.…”

“…Equivalent models are usually used to simulate the physical device work process when analyzing a device like HBT [ 3‐5 ] . The equivalent circuit model is a shortcut for people to understand the characteristics of devices and computing ports [ 6 ] . And small‐signal modeling is a key step toward the elaboration of a large‐signal model, and it has been the subject of intensive research activities [ 7 ] .…”

A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz

“…Furthermore, this method is limited by temperature changes during the measurements [14]. Subsequently, a fully analytical approach will be useful for determination of the intrinsic model parameters after three extrinsic resistances are extracted accurately [15].…”