Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Fu, Houqiang; Baranowski, Izak; Huang, Xuanqi; Chen, Hong; Lu, Zhijian; Montes, Jossue; Zhang, Xiaodong; Zhao, Yuji

doi:10.1109/led.2017.2723603

Cited by 64 publications

(53 citation statements)

References 31 publications

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“…For the Pt/c-AlN SBD reported in Ref. 19, the fitted value of the mean SBH is 2.6 eV, which is larger than that of the Ni/m-AlN SBD, i.e., 2.105 eV, reported in this work. Besides the difference of metal work functions, this result indicates a lower CNL on the c-plane than that on the m-plane of AlN, in agreement with the XPS studies by Reddy et.…”

Section: Discussioncontrasting

confidence: 76%

“…Substitutional oxygen O N is the possible dopant in the unintentionally-doped PVT-grown AlN [17], [39]. The effective donor concentration N D was estimated to be 2.4 × 10 15 cm -3 from the slope of 1/C 2 -V [19] at low reverse biases, as shown in Fig. 4(b).…”

Section: Junction Inhomogeneity Analysismentioning

confidence: 99%

“…By performing the X-ray photoelectron spectroscopy (XPS) measurements, Reddy et al reported SBHs of 1.6 eV to 2.3 eV (2.2 eV to 2.4 eV) for different metals on m-plane (c-plane) AlN [29]. However, the SBHs extracted from the current-voltage (J-V) curves of fabricated AlN SBDs were much smaller, ~1.0 eV [17]- [19]. The underlying mechanism of the large discrepancy in the SBHs of AlN SBDs extracted from the different measurements is still unclear.…”

Section: Introductionmentioning

confidence: 99%

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Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Zhou

et al. 2019

IEEE J. Electron Devices Soc.

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An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor n decreases and the effective SBH increases at high temperatures. The temperature dependences of n and SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni-AlN Schottky junction from the inhomogeneity analysis of the current-voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the currentvoltage characteristics of inhomogeneous SBDs. Index Terms-AlN, non-polar, Schottky barrier diode, inhomogeneity, thermionic emission, physical vapor transport.

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Section: Discussioncontrasting

confidence: 76%

Section: Junction Inhomogeneity Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Zhou

et al. 2019

IEEE J. Electron Devices Soc.

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“…Published by AIP Publishing. https://doi.org/10.1063/1.5006650 III-nitride (III-N) material systems have attracted extensive research interest in both electronics and optoelectronics, including high-electron-mobility transistors, 1 power diodes, [2][3][4] solid-state lighting, [5][6][7] photovoltaics (PV), [8][9][10][11] photodetectors, [12][13][14] and visible light communication. 15 Due to their unique properties, such as tunable wide bandgaps, 16 high absorption coefficient, high thermal stability, and outstanding radiation resistance, 17 InGaN materials have also been proposed as ideal candidates for PV applications especially for high temperature operation or in a harsh environment.…”

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confidence: 99%

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

Huang

Chen

et al. 2017

Applied Physics Letters

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We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray Diffraction analysis reveals that material quality of InGaN/GaN did not degrade after thermal stress. The external quantum efficiency characteristics of solar cells were well-maintained at all temperatures, which demonstrates the thermal robustness of InGaN materials. Analysis of current density–voltage (J–V) curves shows that the degradation of conversion efficiency of solar cells is mainly caused by the decrease in open-circuit voltage (Voc), while short-circuit current (Jsc) and fill factor remain almost constant. The decrease in Voc after thermal stress is attributed to the compromised metal contacts. Transmission line method results further confirmed that p-type contacts became Schottky-like after thermal stress. The Arrhenius model was employed to estimate the failure lifetime of InGaN solar cells at different temperatures. These results suggest that while InGaN solar cells have high thermal stability, the degradation in the metal contact could be the major limiting factor for these devices under high temperature operation.

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“…Much effort has gone into demonstrating AlN-based DUV light-emitting diodes (DUVLEDs), [2][3][4][5] field-effect transistors (FETs), [6][7][8] and Schottky barrier diodes (SBDs). [9,10] For DUV optical devices, there are issues with high dislocation densities in the active layer, which can significantly degrade the internal quantum efficiency (IQE) and lifetime. [11] Especially in high Al-content AlGaN-based DUVLEDs for the short-wavelength (λ < 280 nm) region grown on foreign substrates such as SiC or sapphire, it is difficult to substantially reduce the dislocation density in the active layer due to the large lattice mismatch between the substrate and epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Goto

Takekawa

Nagashima

et al. 2020

Physica Status Solidi (a)

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Dislocation densities in AlN layers grown on c‐plane sapphire and physical vapor transport‐grown AlN (PVT‐AlN) (0001) substrates, by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE), respectively, are evaluated from the density of etch pits formed in sodium hydroxide (NaOH)/potassium hydroxide (KOH) eutectic heated to 450 °C. In the heteroepitaxial layers grown by MOVPE on the sapphire substrates, etch pits with different sizes are formed. Cross‐sectional transmission electron microscopy (TEM) observations reveal that the large, medium, and small pits, with densities of 1.4 × 106, 2.6 × 107, and 6.9 × 109 cm−2, respectively, correspond to screw, mixed, and edge dislocations, respectively. In contrast, in the homoepitaxial layers grown by HVPE on the PVT‐AlN substrates, only one kind of etch pit with uniform size corresponding to the edge dislocations is formed with a density of 103–104 cm−2. Cross‐sectional TEM observation confirms that the edge dislocations in the homoepitaxial layer propagate from the substrate through the interface, which indicates that the dislocation density does not increase during homoepitaxial growth by HVPE. The HVPE‐AlN homoepitaxial layers grown on the PVT‐AlN substrates are found to have very low dislocation density.

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Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Cited by 64 publications

References 31 publications

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

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