Demonstration of a Ti:sapphire mode-locked laser pumped directly with a green diode laser

Sawai, Shota; Hosaka, Aruto; Kawauchi, Hikaru; Hirosawa, Kenichi; Kannari, Fumihiko

doi:10.7567/apex.7.022702

Cited by 51 publications

(30 citation statements)

References 17 publications

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“…The recent availability of green pump diodes enabled the first demonstration of a directly green pumped Ti:Sapphire DPSSL. It achieved 23.5 mW average power and 62-fs pulses using a 1-W laser diode at 520 nm [3], corresponding to an optical-to-optical efficiency of <2.5%.Here, we report on a green-pumped ultrafast Ti:Sapphire DPSSL generating 200 mW average power, which is twice as high as any previously published diode-pumped Ti:Sapphire laser, and it has 5-times higher efficiency in comparison to [3]. We use two 520-nm pump diodes with a total power of 2 W incident onto the laser crystal.…”

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confidence: 77%

“…Here, we report on a green-pumped ultrafast Ti:Sapphire DPSSL generating 200 mW average power, which is twice as high as any previously published diode-pumped Ti:Sapphire laser, and it has 5-times higher efficiency in comparison to [3]. We use two 520-nm pump diodes with a total power of 2 W incident onto the laser crystal.…”

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confidence: 91%

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confidence: 99%

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Ultrafast Diode-Pumped Ti:Sapphire Laser Generating 200-mW Average Power in 68-fs Pulses

et al. 2015

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We present the highest average power from a diode-pumped Ti:Sapphire laser. Using self-starting SESAM-modelocking we obtain 200 mW in 68-fs pulses at 378 MHz. The laser is pumped by two air-cooled 520 nm AlInGaN laser diodes. OCIS codes: (140.7090) Ultrafast Lasers; (140.4050) Mode-locked lasers; (140.3590) Lasers, titaniumSimple, compact and cost-efficient ultrafast diode-pumped solid-state lasers (DPSSLs) have revolutionized numerous areas in science and technology. Most femtosecond DPSSLs are currently based on Yb-doped gain materials, reliably mode-locked with a Semiconductor Saturable Absorber Mirror (SESAM), and pumped by diodes in the 940-980 nm regime. Although large research efforts target to improve the gain bandwidth of Yb-materials, the shortest achievable pulse duration directly from an oscillator is still obtained from Ti:Sapphire lasers. This gain material combines excellent mechanical strength, good thermal conductivity and an extremely broad gain bandwidth. However, Ti:Sapphire requires a pump wavelength in the blue-green spectral region, which until recently required the use of complex and expensive pump lasers. Frequency-doubled green DPSSLs are typically used, and an additional modulator is often required for fast control of the pump power in applications like CarrierEnvelope-Offset (CEO) Phase stabilization.With the advent of gallium nitride (GaN) laser diodes, a major breakthrough was achieved in 2009, when Roth et al. demonstrated the first directly diode-pumped Ti:Sapphire laser [1]. Initially, a pump wavelength of 452 nm was used, which led to slow deterioration of the output power due to a pump-induced loss mechanism. Furthermore, the relatively low pump absorption cross-section in the region around 440-nm makes efficient laser operation challenging. The highest output power of an ultrafast Ti:Sapphire DPSSL demonstrated so far was 105 mW in 50 fs pulses, which required two 445 nm pump diodes with a total power of 4 W [2]. The recent availability of green pump diodes enabled the first demonstration of a directly green pumped Ti:Sapphire DPSSL. It achieved 23.5 mW average power and 62-fs pulses using a 1-W laser diode at 520 nm [3], corresponding to an optical-to-optical efficiency of <2.5%.Here, we report on a green-pumped ultrafast Ti:Sapphire DPSSL generating 200 mW average power, which is twice as high as any previously published diode-pumped Ti:Sapphire laser, and it has 5-times higher efficiency in comparison to [3]. We use two 520-nm pump diodes with a total power of 2 W incident onto the laser crystal. We achieve self-starting SESAM-modelocked operation with 68 fs pulses. The laser operates at a high repetition rate of 378 MHz, resulting in a very compact cavity layout. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal are actively cooled, only the diodes are cooled by a small fan. Fig. 1. Laser Diagram

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Ultrafast Diode-Pumped Ti:Sapphire Laser Generating 200-mW Average Power in 68-fs Pulses

et al. 2015

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“…Very recently, a high-power green (520 nm) InGaN diode laser has reached to an output power of 1 W [3]. We demonstrated CW and mode-locked Ti:sapphire lasers with this green diode laser using a SESAM [4]. Since the absorption coefficient of Ti 3+ doped in a sapphire crystal is highest around 490 nm, the absorption length (1/e) around 520 nm is shorter than that for 450 nm by a factor of 1.6.…”

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confidence: 97%

Power Scaling of Femtosecond Ti:sapphire Laser Double-Side-Pumped by High-Power Green InGaN Diode Lasers

et al. 2015

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“…On the other hand, we have achieved η ≥ 36% and output SH power in excess of 14 W with remarkably low manifestations due to thermal effects in MgO : sPPLT. Such systems could play an immensely important role in development of highly efficient solar cells in addition to serve as versatile pump sources for ultrafast Ti:Sapphire lasers as well as tunable sources in visible frequencies [13]- [15].…”

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Single-Pass Multi-Watt Second-Harmonic-Generation in Congruent and Stoichiometric LiTaO<sub>3</sub>

Shukla

Kumar

Das

2015

IEEE Photon. Technol. Lett.

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We present a comparison of an efficient, singlepass second-harmonic-generation (SHG) of a continuous-wave Yb-fiber laser using a 1) congruently grown LiTaO 3 crystal and 2) stoichiometrically grown LiTaO 3 crystal. Using a Yb-fiber laser pump source delivering a single-frequency output of 40 W at 1064 nm, we have generated ∼8.5 and 14.5 W of singlefrequency green-radiation at 532 nm from 8 mol% MgO-doped periodically poled, congruently grown LiTaO 3 (MgO:cPPLT) crystal and 0.5 mol% MgO-doped periodically poled, stoichiometrically grown LiTaO 3 (MgO:sPPLT) crystal, respectively. We obtained SHG conversion efficiencies in excess of 24% for 5-cm long MgO:cPPLT and ≥36% for 3-cm long MgO:sPPLT. The impact of thermal dephasing was evident in variation of SH power in case of MgO:cPPLT crystal. However, the manifestations due to thermal effect were found out be significantly weaker in case of MgO:sPPLT. This lead to saturation of SHG efficiency at pump powers ≥20 W for MgO:cPPLT. The long-term peak-to-peak power-fluctuation in case of MgO:sPPLT is recorded to be ≈4% for the green beam over a 4-h duration which shows improved performance over MgO:cPPLT output (peak-to-peak power-fluctuation ≈11%). In addition, the 532-nm radiation exhibited single-frequency characteristics with linewidth of 12 MHz (MgO:cPPLT) and 5 MHz (MgO:sPPLT).

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Demonstration of a Ti:sapphire mode-locked laser pumped directly with a green diode laser

Cited by 51 publications

References 17 publications

Ultrafast Diode-Pumped Ti:Sapphire Laser Generating 200-mW Average Power in 68-fs Pulses

Ultrafast Diode-Pumped Ti:Sapphire Laser Generating 200-mW Average Power in 68-fs Pulses

Power Scaling of Femtosecond Ti:sapphire Laser Double-Side-Pumped by High-Power Green InGaN Diode Lasers

Single-Pass Multi-Watt Second-Harmonic-Generation in Congruent and Stoichiometric LiTaO<sub>3</sub>

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