We attain stable mode-locking of an InGaN laser-diode-pumped Pr3+:YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz. We also attempted Kerr-lens mode-locking by employing an SF57 glass in a cavity as a Kerr medium.
We measure the absorption recovery time, the ground- and excited-state absorption cross sections of a Cr4+:YAG crystal at 640 nm for the first time. A pump-probe measurement reveals the existence of two recovery times of 26 ns and 5.6 μs. By a Z-scan experiment, the ground- and excited-state absorption cross sections are estimated to be 1.70 - 1.75 × 10(-17) and 0.95 - 1.00 × 10(-17)cm2, respectively. The adequacy of the proposed model and the accuracy of the estimated parameters of the saturable absorber are verified by reproducing the experimentally obtained performance of a passively Q-switched Pr3+:YLF laser with the Cr4+:YAG saturable absorber from rate equation analysis.
We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF₄ laser. We obtain a maximum peak power of 61.6 W (8.7 μJ/pulse at 7.7 kHz) and 594 W (19.0 μJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.
We demonstrate intracavity second-harmonic generation at 320 nm of a diode-pumped praseodymium-doped YLF laser Q-switched by a Cr4+:YAG crystal. By employing two 3.5-W high-power blue InGaN diode lasers as the pump source, we obtained 50-ns Q-switched pulses with a pulse energy of 1.54 μJ at a repetition rate of 50 kHz. A rate equation analysis shows good agreement with the experimental results.
We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.
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