Proceedings. Design, Automation and Test in Europe Conference and Exhibition
DOI: 10.1109/date.2004.1269193
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Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 μm SiGe BiCMOS technology

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“…Equations (41) and (42) show that R sopt can be made to match the source resistance in varying g m , hence the collector current. Because the best noise performance of the transistor is achieved at a constant collector current density (Chen et al 2004), g m is set in varying the length of the emitter.…”
Section: Dependencies Of the Optimum Noise Impedancementioning
confidence: 99%
“…Equations (41) and (42) show that R sopt can be made to match the source resistance in varying g m , hence the collector current. Because the best noise performance of the transistor is achieved at a constant collector current density (Chen et al 2004), g m is set in varying the length of the emitter.…”
Section: Dependencies Of the Optimum Noise Impedancementioning
confidence: 99%