Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications

Jia, Xiaojia; Niu, Guofu

doi:10.1109/ted.2014.2324031

Cited by 3 publications

(1 citation statement)

References 34 publications

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“…It must provide sufficient gain to the incoming signal for processing in the subsequent stages. In the aspect of small-signal operation, circuit performance is measured with scattering parameters (S-parameters); S 21 , S 11 , and S 22 represent power gain, input matching, and output matching, respectively [17]. In addition, noise performance is defined as the noise figure (NF) with units of dB [18].…”

Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics

Niu

Luo

et al. 2015

Int J Numerical Modelling

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This paper investigates modeling of silicon-germanium heterojunction bipolar transistor noise parameters and impedance-matched Low-Noise Amplifiers (LNAs) intended for operation across a wide temperature range (from 93 to 393 K). In general, noise performance improves with cooling until about 150 K, then degrades some because of carrier freeze-out. With a temperature independent bias current, an LNA designed for 300 K operation shows acceptable performance from 93 to 393 K, albeit with some degradation of linearity below 120 K.

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The influence of emitter undercut on device parameters of SiGe HBT

Shen¹,

Tan²,

Cui³

et al. 2014

International Conference on Circuits, Communication, Control and Computing

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Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications

Cited by 3 publications

References 34 publications

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics

The influence of emitter undercut on device parameters of SiGe HBT

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