Demonstration of a ring-FEL as an EUV lithography tool

Abstract

<jats:p>This paper presents the required structure and function of a ring-FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m-long straight section that conducts an extremely low emittance beam from a fourth-generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring-FEL as a EUVL source are described.</jats:p>

A synchrotron-based kilowatt-level radiation source for EUV lithography

“…Yet, the average power of the spontaneous EUV radiation from an electron storage ring is only several watts even with extremely high beam current and long undulators. Using micro-bunched electron beams is currently the most effective way to enhance the average power of accelerator-based light sources, since the output power is proportional to the square of the electron numbers in the micro-bunches 3 , 4 . For storage rings, the leading concept for realizing this kind of light source is the steady-state micro-bunching (SSMB) 5 – 7 scheme.…”

A synchrotron-based kilowatt-level radiation source for EUV lithography

“…Yet, the average power of the spontaneous EUV radiation from an electron storage ring is only several watts even with extremely high beam current and long undulators. Using micro-bunched electron beams is currently the most effective way to enhance the average power of accelerator based light source since the output power is proportional to square of the number of electrons in the micro-bunches [3,4]. For storage rings, the leading concept for realizing this kind of light source is the steady-state micro-bunching (SSMB) [5][6][7].…”