Demonstration of a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>4</mml:mn></mml:math>-Cycle Phase Shift in the Radiation-Induced Oscillatory Magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaAs</mml:mi><mml:mo>/</mml:mo><mml:mi>AlGaAs</mml:mi></mml:math>Devices

Mani, R. G.; Smet, J. H.; Klitzing, K. von; Narayanamurti, V.; Johnson, W.B.; Umansky, V.

doi:10.1103/physrevlett.92.146801

Cited by 177 publications

(106 citation statements)

References 23 publications

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“…Since the electron effective mass determined from the radiation-induced magnetoresistance oscillations, m * = 0.065m, is known to differ slightly from the standard value, m * = 0.067m, see ref. 5 , B f may not be quite the same as B C .…”

Section: Methodsmentioning

confidence: 99%

“…1,5,32 These R xx oscillations show a non-linear dependence on the microwave power, P , at modest P , 25,60 and a strong sensitivity to T . 1 Proposed mechanisms for such oscillations include radiation-assisted indirect inter-Landau-level scattering by phonons and impurities (the displacement model), 34,36,39,57 non-parabolicity effects in an ac-driven system (the non-parabolicity model), 38 the periodic motion of the electron orbit centers under irradiation (the radiation driven electron orbit model).…”

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confidence: 99%

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Terahertz photovoltaic detection of cyclotron resonance in the regime of radiation-induced magnetoresistance oscillations

Mani

Ramanayaka

et al. 2013

Phys. Rev. B

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We examine and compare the diagonal magnetoresistance, R xx , and the photo-voltage induced by microwave (42 ≤ f < 300GHz) and terahertz (f ≥ 300GHz) photoexcitation in the high mobility quasi two-dimensional GaAs/AlGaAs system. The data demonstrate strong radiation-induced magneto-resistance oscillations in R xx to 360GHz. In addition, cyclotron resonance is observed in the photo-voltage to 725GHz. These results show that our high mobility GaAs/AlGaAs 2DES specimens remain photo-active in magnetotransport into the terahertz band.

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Section: Methodsmentioning

confidence: 99%

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confidence: 99%

Terahertz photovoltaic detection of cyclotron resonance in the regime of radiation-induced magnetoresistance oscillations

Mani

Ramanayaka

et al. 2013

Phys. Rev. B

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“…The B-field was calibrated by ESR of DPPH. [12,29] Shubnikov-de Haas oscillations and associated IQHE became weaker, as usual, at higher T , and few oscillations or Hall plateaus were evident for ν > 20 at T > 1.7K in the dark study. Thus, we focused upon 0.45 < T < 1.7K, where T -induced changes in the phase relations were not discerned and, further, beats were not observed in the SdH oscillations.…”

Section: Methodsmentioning

confidence: 99%

“…The results therefore suggest one new class of IQHE, as they provide insight into the origin of oscillatory variations in the Hall effect, and their evolution into Hall plateaus, in the low-B large-ν regime of the radiationinduced zero-resistance states in the photoexcited high mobility 2DES. [6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40,41,42,43,44,45,46,47,48,49] Transport studies of photo-excited two-dimensional electron systems have become a topic of interest following the discovery of novel radiation-induced zeroresistance states in the GaAs/AlGaAs system at high filling factors. [6,16] The characteristic field B f for these zero-resistance states and associated magneto-re...…”

Section: Introductionmentioning

confidence: 99%

Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect

et al. 2009

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We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, ν. At large-ν, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and "Type-3") between the oscillatory diagonal-and Hall-resistances, as the canonical Integral Quantum Hall Effect (IQHE) is manifested in the "Type-1" case of approximately orthogonal diagonal-and Hall resistance-oscillations. Surprisingly, the investigation indicates quantum Hall plateaus also in the "Type-3" case characterized by approximately "anti-phase" Hall-and diagonal-resistance oscillations, suggesting a new class of IQHE.Transport studies under microwave photo-excitation exhibit radiation-induced magneto-resistance oscillations in both the diagonal, Rxx, and off-diagonal, Rxy, resistances. Further, when the radiation-induced magneto-resistance oscillations extend into the quantum Hall regime, there occurs a radiation-induced non-monotonic variation in the amplitude of Shubnikov-de Haas (SdH) oscillations in Rxx vs. B, and a non-monotonic variation in the width of the quantum Hall plateaus in Rxy. The latter effect leads into the vanishing of IQHE at the minima of the radiation-induced Rxx oscillations with increased photo-excitation. We reason that the mechanism which is responsible for producing the non-monotonic variation in the amplitude of SdH oscillations in Rxx under photoexcitation is also responsible for eliminating, under photo-excitation, the novel "Type-3" IQHE in the high mobility specimen. INTRODUCTIONA 2-dimensional electron system (2DES) at high magnetic fields, B, and low temperatures, T , exhibits the integral quantum Hall effect (IQHE), which is characterized by plateaus in the Hall resistance R xy vs. B, at R xy = h/ie 2 , with i = 1,2,3,... and concurrent vanishing diagonal resistance R xx as T → 0 K, in the vicinity of integral filling factors of Landau levels, i.e., ν ≈ i. [1,2,3] With the increase of the electron mobility, µ, at a given electron density, n, and low T , IQHE plateaus typically become narrower as fractional quantum Hall effects (FQHE) appear in the vicinity of, where p/q denotes mostly odd-denominator rational fractions. [2,3] Experimental studies of the highest mobility specimens have typically focused upon FQHE and other novel phases. [2,3,4,5] Meanwhile, the possibility of new variations of IQHE that might appear with the canonical effect in the reduceddisorder specimen, especially at large-ν, has been largely unanticipated. In the first dark-study part of this paper, we show that three distinct phase relationships can occur between the oscillatory diagonal-and Hall-resistances in the high-mobility dark specimen at ν > 5, and that IQHE can be manifested in two of these variations. The results therefore suggest one new class of IQHE, as they provide insight into the origin of oscillatory variations in the Hall effect, and their evolution into Hall plateaus, in the low-B large-ν regime of the radiationinduced zero-resistance sta...

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“…[3] The microwave radiation-induced magnetoresistance oscillations that lead into the zero-resistance states include characteristic traits such as periodicity in B −1 ,[1, 2] a 1/4-cycle shift, [4], distinctive sensitivity to temperature and microwave power, [5,6] along with other specific features. .…”

Section: Introductionmentioning

confidence: 99%

Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory

Iñarrea

Wegscheider

et al. 2016

Phys. Rev. B

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We present an experimental study of the microwave power and the linear polarization angle dependence of the microwave induced magnetoresistance oscillations in the high-mobility GaAs/AlGaAs two-dimensional electron system. Experimental results show sinusoidal dependence of the oscillatory magnetoresistance extrema as a function of the polarization angle. Yet, as the microwave power increases, the angular dependence includes additional harmonic content, and begins to resemble the absolute value of the cosine function. We present a theory to explain such peculiar behavior.

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Demonstration of a1/4-Cycle Phase Shift in the Radiation-Induced Oscillatory Magnetoresistance inGaAs/AlGaAsDevices

Cited by 177 publications

References 23 publications

Terahertz photovoltaic detection of cyclotron resonance in the regime of radiation-induced magnetoresistance oscillations

Terahertz photovoltaic detection of cyclotron resonance in the regime of radiation-induced magnetoresistance oscillations

Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect

Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory

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