Demonstration of a High Extinction Ratio Monolithic CMOS Integrated Nanophotonic Transmitter and 16 Gb/s Optical Link

Gill, Douglas M.; Proesel, Jonathan E.; Xiong, Chi; Orcutt, Jason S.; Rosenberg, J.J.; Khater, Marwan; Barwicz, Tymon; Assefa, Solomon; Shank, Steven M.; Reinholm, Carol; Ellis-Monaghan, John; Kiewra, E.; Kamlapurkar, Swetha; Breslin, Chris; Green, William M. J.; Haensch, Wilfried; Vlasov, Yurii A.

doi:10.1109/jstqe.2014.2381468

Cited by 36 publications

(11 citation statements)

References 48 publications

(34 reference statements)

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“…3a. We compute the voltage according to equation 2 by using a SiO 2 dielectric layer and compare the result with that of typical Si modulators [93][94][95][96][97][98][99][100][101][102][103] based on p-n junctions or capacitors in the same range of voltages. By biasing SLG to |E F | > E ph /2, where absorption is small, a neff modulation ~2 x 10 −3 can be obtained [79].…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

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Section: Graphene-based Modulatorsmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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“…With the monolithic integration approach, the cofabrication of optical devices and CMOS transistors on the same silicon wafer provides versatile possibilities of new optoelectronic functions and dramatic improvement for system footprint and power dissipation. For example, in 2015, based on the 90-nm SOI process node, IBM introduced the CMOS9GW silicon photonic platform, and a 16-Gb/s full transceiver link has been demonstrated in [258]. Based on the same platform, the speed has been boosted to 56 Gb/s by using the fourlevel PAM approach [259].…”

Section: I N T E G R At I O Nmentioning

confidence: 99%

The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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| In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today. Given that other papers in this special issue give detailed reviews of key aspects of the technology, this paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success. The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration.In so doing, the paper will also serve as an introduction to the other papers within this special issue.

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“…While today the short-reach optical interconnects (<100m) inside the datacenter are dominated by low cost multimode VCSEL-links, there is a growing demand for longer reach optical links in intra and inter-datacenter interconnects (up to 10km) for datacenter expansion. Singlemode fiber (SMF) optical links employing silicon and/or heterogeneous III-V/Si photonics manifest themselves as promising candidates for this market due to their potential for realizing an integrated WDM transceiver with low cost [1][2][3][4][5][6][7][8][9][10]. Integration technologies varying from monolithic silicon photonics [1][2][3][4] to hybrid III-V/Si [5][6][7][8][9][10] have been investigated extensively in academia as well as industry.…”

mentioning

confidence: 99%

Four-Channel WDM Transmitter With Heterogeneously Integrated III-V/Si Photonics and Low Power 32 nm CMOS Drivers

Huynh¹,

Ramaswamy

Rimolo-Donadío

et al. 2016

J. Lightwave Technol.

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We experimentally demonstrate a novel fourchannel wavelength division multiplexing (WDM) transmitter operating at 1.3µm wavelength employing heterogeneously integrated III-V/Si photonic circuit co-packaged with low power 32nm SOI CMOS driver integrated circuits (ICs). Error-free operation (BER<10 -12 ) has been achieved across all four channels for back-to-back, 2km and 10km single-mode fiber transmission at 25Gb/s per each channel, targeting intra and inter-datacenter interconnect applications. Power consumption as low as 19.2mW for four CMOS driver ICs has been recorded, which yields 0.19pJ/bit energy efficiency.

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Demonstration of a High Extinction Ratio Monolithic CMOS Integrated Nanophotonic Transmitter and 16 Gb/s Optical Link

Cited by 36 publications

References 48 publications

Graphene-based integrated photonics for next-generation datacom and telecom

Graphene-based integrated photonics for next-generation datacom and telecom

The Emergence of Silicon Photonics as a Flexible Technology Platform

Four-Channel WDM Transmitter With Heterogeneously Integrated III-V/Si Photonics and Low Power 32 nm CMOS Drivers

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