Demonstration of 1T1C FeRAM Arrays for Nonvolatile Memory Applications

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

“…To ensure the benefits of the film thickness scaling, we investigated the reliability of MFM films with Hf0.5Zr0.5O2 thicknesses of 10-nm and 8-nm. A higher EBD was observed for TZDB measurements on the 8-nm sample, and longer tBD at the same stress electric field was observed for TDDB measurements, which are in good agreement with the results of previous works [17], [18]. Furthermore, we experimentally verified the cycling tolerance advantage of film thickness scaling by 1T1C FeRAM array with different HZO thicknesses of 8 nm and 10 nm using different small capacitor areas (0.20, 0.40, and 1.00 µm 2 ) for the first time, demonstrating a cycling tolerance value higher than 10 18 for hard break-down at an operating voltage of 2.0 V and operating speed of 100 ns at 85 °C on the 8-nm sample with consistent HZO thickness and capacitance area dependence.…”

“…We have reported a 64 kbit FE-type 1T1C FeRAM with higher cycling tolerance for hard breakdown with lower voltage operation via HZO film thickness scaling [17], [18]. In this study, we present an extension of the previous work on investigating film thickness scaling and experimentally demonstrating its effect by array-level endurance analysis for the first time.…”

“…The properties of the 1T1C FeRAM array using 8-nm and 10nm samples consisting of TiN/HZO/TiN capacitors were previously reported in [17], [18]. The RBERs due to hard breakdown were investigated on both 8-nm and 10-nm samples using 4 kbits for capacitors with different capacitance areas of 0.20, 0.40, and 1.00 µm 2 in a memory cell, as shown in Fig.…”

Local Orthorhombic Phase in Zirconium Oxide Nanocrystals: Insights from X-ray Pair Distribution Function Analysis

“…Materials that exhibit switchable polarization have garnered significant interest due to their potential application in various fields, e.g., energy storage, energy harvesting, infrared sensors, high permittivity capacitors, Ferroelectric Random Access Memory (FeRAM), Radio Frequency Identification (RFID), and other optoelectronic devices. [1][2][3][4][5][6][7][8] Switchable polarization refers to the ability of certain materials to exhibit a reversible change in the orientation of their electric dipole moment under the application of an external electric field (ferroelectricity), pressure (piezoelectricity), or thermal variations (pyroelectricity). Since all ferroelectric materials are pyroelectric and piezoelectric, ferroelectricity is a unique behavior, which allows the interchange between electrical, mechanical, and thermal energy.…”

Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

“…[3] Furthermore, the 1T1C FeRAM arrays have been recently demonstrated by Sony. [4] In addition to these variations from conventional devices, a rapidly increasing number of FTJs with fluorite-structured ferroelectrics have been reported since their first demonstration in 2016. [5] In the semiconductor industry, materials innovation has always been essential for resolving seemingly unsolvable problems.…”