Delta-Doping of Si in GaN by Metalorganic Chemical Vapor Deposition

Abstract

Si delta-doping in the GaN layer has been successfully demonstrated by metalorganic chemical vapor deposition. From the capacitance-voltage measurement, a sharp carrier concentration profile with a full width at half-maximum of 4.1 nm has been achieved with a peak concentration of 9.8×1018 cm-3. Si delta-doping concentration increases and then decreases with an increase in delta-doping time, and the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. This indicates that delta-doping concentration is limited by the Si desorption process due to high growth temperatures.

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

“…Little is known about -doped GaN. Electrical properties of -doped GaN have exclusively been studied using capacitance/voltage experiments, 17,18) and the impact of -doping on the performance of light emitting diodes 19,20) and of transistors 21) has been investigated. In all cases sapphire substrates have been used.…”