Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor

Abstract

Degradation of current gain for ion implanted 4H-SiC bipolar junction transistor is described. The influence of bandgap-narrowing to the collector and base currents of the transistor was investigated using ISE-TCAD simulator. Simulated results show good agreement with the measured results, which show that the common emitter current gain of 3.9 is obtained at a maximum base concentration of 2 × 10 17 /cm 3 and a maximum emitter concentration of 4 × 10 19 /cm 3 for ion implanted 4H-SiC BJTs.