Degradation mechanisms of GaAs PHEMTs under operation in high humidity conditions

Hisaka, T.; Sasaki, Hirokazu; Nogamni, Yoichi; Hosogi, K.; Yoshida, N.; Villanueva, A.A.; Alamo, J.A. del; Hasegawa, Shigehiko; Asahi, H.

doi:10.1109/rocs.2008.5483620

Cited by 2 publications

(3 citation statements)

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“…It is mainly due to the above reasons; the PA's performance degradation for the changes in temperature and humidity conditions is a hot topic of research [40]- [48]. However, most of the published papers are focused on the PA's performances degradations limited to the individual characteristic temperature and humidity, for instance, 85℃/85%RH [40], 121℃/100%RH [40], 0℃ [41], 25℃ [42], 50℃ [49], 80℃ [50], 100℃ [43], 130℃/60%RH [44], 130℃/40%RH [44]. Measurement of a PA's temperature and humidity dependence at specific temperature/humidity points does not provide enough information to model the relationships of the PA's performance degradations in actual environmental conditions [34].…”

Section: Introductionmentioning

confidence: 99%

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Zhou

Jha

2021

IEEE Access

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As the technology scales down, besides the CAD tools and design guidelines, understanding circuit performance degradation as a consequence of transistor degradation becomes essential for designers. Due to several adverse environmental conditions, the study of performance degradation in the power amplifier (PA) is very demanding research. In this paper, an RF PA is experimentally studied to observe various characteristic degradations in a broad range of operating temperature and humidity conditions. Based on a few key measurement points, a measurement-based modeling method is proposed to help designers make intelligent decisions to minimize the performance degradation effects. This method uses four two-dimensional interpolation models, and the results show that the prediction results of the four planar interpolation models are in good agreement with the measurement results. The results presented in this article help select design models for the RF power amplifier that can analyze the performance degradation of the transistor parameters in advance. Cubic and spline interpolation has the highest model accuracy among the four two-dimensional models, while the nearest interpolation offers the shortest training time.

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Section: Introductionmentioning

confidence: 99%

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Zhou

Jha

2021

IEEE Access

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“…These components are commonly used in cellular phones and satellite receivers, which are often enclosed in nonhermetic packages in order to reduce the device cost [2]. Further, it should be noted that the thickness of a passivation film, which generally consists of a silicon nitride (SiN) layer, cannot be increased in high-frequency devices because this increase would degrade their high-frequency characteristics [3].…”

Section: Introductionmentioning

confidence: 99%

“…Humidity tolerance has been evaluated using practical high-frequency devices under high-temperature and high-humidity conditions. Hisaka et al reported that the maximum drain current (I D(MAX) ) of AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) devices decreased when these devices were exposed to high-temperature and high-humidity with electrical bias condition [4]. Shiramizu et al exposed a planar SiN/GaAs sample and observed that oxygen diffused from the surface of the sample; they identified the reaction that occurred between GaAs and moisture using secondary-ion mass spectrometry (SIMS) [5].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy

Sasaki

Hisaka

Kadoiwa

et al. 2012

IEICE Electron. Express

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Abstract:We investigated the changes in the electrical properties of a SiN/GaAs interface under high-temperature and high-humidity conditions, using photoreflectance (PR) spectroscopy and the electrical device characteristics. The PR spectra show the Franz-Keldysh oscillation (FKO); these spectra show that the period decreases after the sample is exposed to humidity. The electric field strength obtained from the FKO period indicates that the initial high electric field decreases with humidity exposure. Decomposed water molecules are supposed to diffuse into the SiN layer and react with the SiN/GaAs interface, causing a decrease in the interface states. Keywords: reliability, photoreflectance, Franz-Keldysh oscillation, humidity, MESFET Classification: Electron devices, circuits, and systems Tang, M. Hong, and J. Kwo, "Schottky barrier height and interfacial state density on oxide-GaAs interface," References

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Degradation mechanisms of GaAs PHEMTs under operation in high humidity conditions

Cited by 2 publications

References 4 publications

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy

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