Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM

Zenkevich, A.; Lebedinskiǐ, Yu. Yu.; Scarel, Giovanna; Fanciulli, M.; Baturin, A. S.; Lubovin, N.

doi:10.1016/j.microrel.2007.01.071

Cited by 7 publications

(9 citation statements)

References 18 publications

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“…Therefore, the interlayer mainly composed of stoichiometric HfO 2 changes gradually into Hf–silicate layer after annealing at 750 °C . As the temperature is increased to 850 °C, the Hf 4f XP spectrum exhibits an additional feature at BE ~14.5 eV, which is assigned to the Hf–Si phase . This interpretation is supported by Cho's result that the dissociated oxygen in HfO 2 is evacuated to form a silicide layer and this dissociation process of the oxides can be written as:

H f O_{2} + S i O_{2} + S i \to H f S i_{x} + S i O_{((), g)} + S i

…”

Section: Resultsmentioning

confidence: 73%

“…(d), the peaks of BE for Hf–O–Si and Hf–O suddenly disappeared, only one peak of Hf silicide remained after the annealing at 950 °C. This means that at first, some bands have broke in Hf–O–Si phase that induces the Hf–Si bonding and Hf–O rebinding before HfSi formationx . Secondly, HfO 2 is nearly completely dissociated and oxygen diffuses out through the film at an annealing temperature of 900 °C ~ 950 °C.…”

Section: Resultsmentioning

confidence: 99%

“…The Y shift of charge compensation gun is −3 V, magnitudes of voltage and current are −2 V and 100 μA, respectively. The intensities for all the XPS spectra reported here have been normalized for comparison, and adventitious hydrocarbon C 1 s binding energy at 284.5 eV was used as reference to calibrate the energy shift of the Hf4f, Ta4f, and O1s shallow core levels . The corrected values of the Hf 4f 7/2 , Ta 4f 7/2 ,

O_{1 s}^{S i - O}

, and Si 2p 3/2 peaks are found to be 16.9 ± 0.1 eV, 23.0 ± 0.1 eV, 533.0 ± 0.1 eV, and 99.3 ± 0.1 eV, respectively, for the as‐deposited HfTaO film.…”

Section: Methodsmentioning

confidence: 99%

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The chemistry and thermal stability of HfTaO/Si interface by x‐ray photoelectron spectroscopy

Chen

Yang

et al. 2011

Surface & Interface Analysis

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The chemistry and thermal stability of HfTaO/Si interface as a function of annealing temperature have been investigated by x-ray photoelectron spectroscopy. For the as-deposited sample, the formation of Hf-silicate bond is observed on Hf 4f corelevel spectra, which contributes to bulk HfO 2 and SiO 2 . Besides, the suboxide of tantalum (Ta +1 ) is formed at the interface at room temperature because of oxygen-deficient conditions. HfSi 2 , Hf x Si y O 4, and HfO 2 coexists in interfacial region at 850 C, meanwhile, an evidence for transforming from the Ta 1+ to tantalum oxide (Ta 5+ ) is verified.

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H f O_{2} + S i O_{2} + S i \to H f S i_{x} + S i O_{((), g)} + S i

…”

Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 99%

O_{1 s}^{S i - O}

, and Si 2p 3/2 peaks are found to be 16.9 ± 0.1 eV, 23.0 ± 0.1 eV, 533.0 ± 0.1 eV, and 99.3 ± 0.1 eV, respectively, for the as‐deposited HfTaO film.…”

Section: Methodsmentioning

confidence: 99%

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The chemistry and thermal stability of HfTaO/Si interface by x‐ray photoelectron spectroscopy

Chen

Yang

et al. 2011

Surface & Interface Analysis

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“…These two peaks appearing at the HfO 2 /Si interface are resulted from HfSi/HfSiO x and Hf with low oxygen content. It should be mentioned that the presence of pure Hf metal, which might be in the form of local nanocluster, or HfSi regions without any oxygen content since this cannot be excluded from the XPS signal alone as the peak position of these formation is hardly distinguishable [6,[8][9][10][11].…”

Section: Resultsmentioning

confidence: 99%

Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing

et al. 2010

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Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicker SiO2 layer functioning as a control oxide. In this work, we studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing. This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy. It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing. This is related to the low solubility of Ge in HfO2 which is observed in other oxides as well. Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected. © 2009 Elsevier B.V. All rights reserved.TÜBİTAK; Chalmers University of Technolog

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“…For this reason, the ZrO 2 films annealed at 200°C for 10 min, 30 min and 60 min, but not for 90 min, were used for a more detailed investigation. Concerning the formation of holes and blisters on the surface, a few works found that a degradation mechanism in the dielectric layers on Si during annealing at high temperatures was due to formation of local paths for SiO vaporization from the interface [16,17]. Recently, we have also found that these holes and blisters occurred during annealing even at low temperatures for both ZrO 2 and HfO 2 layers on Si substrates and the mechanism between these formations at low and high temperatures were a little different.…”

Section: Resultsmentioning

confidence: 99%

Preparation of ZrO2 dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage

et al. 2010

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ZrO2 dielectric layers were prepared by a two-step process, a deposition of pure Zr film with and without a negative substrate bias voltage and a subsequent oxidation of the Zr films. We focused on the effect of the negative substrate bias voltage on the Zr film deposition and the subsequent oxidation of the Zr films. As a result, the Zr film deposited at the substrate bias voltage of −50 V (Vs = −50 V) was found to have a high intensity peak of Zr (100) and a uniform and smooth surface. From the capacitance-voltage and currentvoltage measurements of the ZrO2 films, a high dielectric constant of 21 and the equivalent oxide thickness (EOT) of 2.6 nm were obtained on the oxidation layer of the Zr film deposited at Vs = −50 V. On the other hand, a low dielectric constant of 15 and the EOT of 3.6 nm was obtained on that of the Zr film deposited at Vs = 0 V. The leakage current density of the ZrO2 film (Vs = −50 V) was 5.69×10 −4 A/cm 2 , and this value was much lower than the 1.21×10 −4 A/cm 2 for the ZrO2 film (Vs = 0 V). It was found that the two-step process by subsequent oxidation after film deposition using a negative substrate bias voltage is useful for obtaining high-quality dielectric layers.

show abstract

Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM

Cited by 7 publications

References 18 publications

The chemistry and thermal stability of HfTaO/Si interface by x‐ray photoelectron spectroscopy

The chemistry and thermal stability of HfTaO/Si interface by x‐ray photoelectron spectroscopy

Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing

Preparation of ZrO2 dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage

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