Abstract:The discovery by the ATLAS and CMS experiments of a new boson with mass around 125 GeV and with measured properties compatible with those of a Standard-Model Higgs boson, coupled with the absence of discoveries of phenomena beyond the Standard Model at the TeV scale, has triggered interest in ideas for future Higgs factories. A new circular e + e − collider hosted in a 80 to 100 km tunnel, TLEP, is among the most attractive solutions proposed so far. It has a clean experimental environment, produces high luminosity for top-quark, Higgs boson, W and Z studies, accommodates multiple detectors, and can reach energies up to the tt threshold and beyond. It will enable measurements of the Higgs boson properties and of Electroweak Symmetry-Breaking (EWSB) parameters with unequalled precision, offering exploration of physics beyond the Standard Model in the multi-TeV range. Moreover, being the natural precursor of the VHE-LHC, a 100 TeV hadron machine in the same tunnel, it builds up a long-term vision for particle physics. Altogether, the combination of TLEP and the VHE-LHC offers, for a great cost effectiveness, the best precision and the best search reach of all options presently on the market. This paper presents a first appraisal of the salient features of the TLEP physics potential, to serve as a baseline for a more extensive design study.

Magnetron sputtered HfO2 layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO x suboxide layer at the HfO2 /Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O2 /Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO2, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO2 layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind

Perovskite surface treatment with additives has been reported to improve charge extraction, stability, and/or surface passivation. In this study, treatment of a 3D perovskite ((FAPbI 3 ) 1−x (MAPbBr 3 ) x ) layer with a thienothiophene-based organic cation (TTMAI), synthesized in this work, is investigated. Detailed analyses reveal that a 2D (n = 1) or quasi-2D layer does not form on the PbI 2rich surface 3D perovskite. TTMAI-treated 3D perovskite solar cells (PSCs) fabricated in this study show improved fill factors, providing an increase in their power conversion efficiencies (PCEs) from 17% to over 20%. It is demonstrated that the enhancement is due to better hole extraction by drift-diffusion simulations. Furthermore, thanks to the hydrophobic nature of the TTMAI, PSC maintains 82% of its initial PCE under 15% humidity for over 380 h (the reference retains 38%). Additionally, semitransparent cells are demonstrated reaching 17.9% PCE with treated 3D perovskite, which is one of the highest reported efficiencies for double cationic 3D perovskites. Moreover, the semitransparent 3D PSC (TTMAI-treated) maintains 87% of its initial efficiency for six weeks (>1000 h) when kept in the dark at room temperature. These results clearly show that this study fills a critical void in perovskite research where highly efficient and stable semitransparent perovskite solar cells are scarce.

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Depth profiles of Si nanocrystals formed in sapphire by ion implantation and the effect of charging during X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements have been studied. Atomic concentration and the chemical environment of Si, Al, and O have been measured as a function of depth from the sample surface by SIMS and XPS. Both as-implanted and annealed samples have been analyzed to understand the effect of nanocrystal formation on the depth distribution, chemical structure, and the charging effect before and after the formation process. SIMS measurements have revealed that the peak position of the Si concentration shifts to deeper values with implantation dose. This is explained by the fact that the structure of the matrix undergoes a phase transformation from pure sapphire to a Si rich amorphous Al2O3 with heavy dose implantation. Formation of Si nanocrystals has been observed by XPS by an increase in the Si-Si signal and a decrease in Si-O bond concentrations after the annealing. Variation in binding energies of Si and O with Si concentration (i.e., with depth) has been studied in terms of chemical environments and charging effects. It is found that binding energy of these elements shifts to lower values with increasing Si content. This is a result of less charging due to the presence of easy discharge paths in the Si rich regions of the matrix. Nanocrystal formation leads to even less charging which is probably due to the further increase in conductivity with the formation.

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Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicker SiO2 layer functioning as a control oxide. In this work, we studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing. This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy. It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing. This is related to the low solubility of Ge in HfO2 which is observed in other oxides as well. Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected. © 2009 Elsevier B.V. All rights reserved.TÜBİTAK; Chalmers University of Technolog

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